Anomalous bismuth-stabilized (2x1) reconstructions on GaAs(100) and InP(100) surfaces

P Laukkanen, M P J Punkkinen, H-P Komsa, M Ahola-Tuomi, K Kokko, M Kuzmin, Johan Adell, Janusz Sadowski, R E Perala, M Ropo, T T Rantala, I J Vayrynen, M Pessa, L Vitos, J Kollar, S Mirbt, B Johansson

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Abstract

First-principles phase diagrams of bismuth-stabilized GaAs- and InP(100) surfaces demonstrate for the first time the presence of anomalous (2 x 1) reconstructions, which disobey the common electron counting principle. Combining these theoretical results with our scanning-tunneling-microscopy and photoemission measurements, we identify novel (2 x 1) surface structures, which are composed of symmetric Bi-Bi and asymmetric mixed Bi-As and Bi-P dimers, and find that they are stabilized by stress relief and pseudogap formation.
Original languageEnglish
Article number086101
JournalPhysical Review Letters
Volume100
Issue number8
DOIs
Publication statusPublished - 2008

Subject classification (UKÄ)

  • Physical Sciences
  • Natural Sciences

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