Abstract
First-principles phase diagrams of bismuth-stabilized GaAs- and InP(100) surfaces demonstrate for the first time the presence of anomalous (2 x 1) reconstructions, which disobey the common electron counting principle. Combining these theoretical results with our scanning-tunneling-microscopy and photoemission measurements, we identify novel (2 x 1) surface structures, which are composed of symmetric Bi-Bi and asymmetric mixed Bi-As and Bi-P dimers, and find that they are stabilized by stress relief and pseudogap formation.
Original language | English |
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Article number | 086101 |
Journal | Physical Review Letters |
Volume | 100 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2008 |
Subject classification (UKÄ)
- Physical Sciences
- Natural Sciences