@inproceedings{6cc647a16f044210bc52601c4b2a0b86,
title = "Asymmetric InGaAs MOSFETs with InGaAs source and InP drain",
abstract = "Asymmetric In0.53Ga0.47As MOSFETs with different regrown contacts at source (In0.53Ga0.47As) and drain (InP) have been developed. By introducing a wider bandgap material, InP as drain electrode, higher self-gain g(m)/g(d) has been obtained with reduced output conductance g(d) and improved break-down voltage V-bd. For L-g=100nm, a high oscillation frequency f(max)= 270GHz has been obtained using an InP drain.",
author = "Jiongjiong Mo and Erik Lind and Lars-Erik Wernersson",
year = "2014",
language = "English",
publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",
booktitle = "26th International Conference on Indium Phosphideand Related Materials (IPRM)",
address = "United States",
note = "26th International Conference on Indium Phosphide and Related Materials (IPRM) ; Conference date: 11-05-2014 Through 15-05-2014",
}