Asymmetric InGaAs MOSFETs with InGaAs source and InP drain

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceedingpeer-review

Abstract

Asymmetric In0.53Ga0.47As MOSFETs with different regrown contacts at source (In0.53Ga0.47As) and drain (InP) have been developed. By introducing a wider bandgap material, InP as drain electrode, higher self-gain g(m)/g(d) has been obtained with reduced output conductance g(d) and improved break-down voltage V-bd. For L-g=100nm, a high oscillation frequency f(max)= 270GHz has been obtained using an InP drain.
Original languageEnglish
Title of host publication26th International Conference on Indium Phosphideand Related Materials (IPRM)
PublisherIEEE - Institute of Electrical and Electronics Engineers Inc.
Publication statusPublished - 2014
Event26th International Conference on Indium Phosphide and Related Materials (IPRM) - Montpellier, FRANCE
Duration: 2014 May 112014 May 15

Publication series

Name
ISSN (Print)1092-8669

Conference

Conference26th International Conference on Indium Phosphide and Related Materials (IPRM)
Period2014/05/112014/05/15

Subject classification (UKÄ)

  • Electrical Engineering, Electronic Engineering, Information Engineering

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