We have developed laterally asymmetric In0.53Ga0.47As/InP MOSFETs with different regrown contacts at the source (In0.53Ga0.47As) and the drain (InP). Introducing a wider bandgap material, InP, as the drain electrode, higher voltage gain g(m)/g(d) has been obtained with a reduced output conductance g(d) and improved breakdown voltage V-bd. For L-g = 50 nm, a high oscillation frequency f(max) = 300 GHz has been obtained using an InP drain. A gate-connected field-plate has been introduced, which contributes to the device saturation with better impact ionization/band-to-band tunneling immunity.
Subject classification (UKÄ)
- Electrical Engineering, Electronic Engineering, Information Engineering
- InGaAs MOSFET
- source/drain engineering
- voltage gain