Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering

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Abstract

We have developed laterally asymmetric In0.53Ga0.47As/InP MOSFETs with different regrown contacts at the source (In0.53Ga0.47As) and the drain (InP). Introducing a wider bandgap material, InP, as the drain electrode, higher voltage gain g(m)/g(d) has been obtained with a reduced output conductance g(d) and improved breakdown voltage V-bd. For L-g = 50 nm, a high oscillation frequency f(max) = 300 GHz has been obtained using an InP drain. A gate-connected field-plate has been introduced, which contributes to the device saturation with better impact ionization/band-to-band tunneling immunity.
Original languageEnglish
Pages (from-to)515-517
JournalIEEE Electron Device Letters
Volume35
Issue number5
DOIs
Publication statusPublished - 2014

Subject classification (UKÄ)

  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • InGaAs MOSFET
  • source/drain engineering
  • voltage gain
  • oscillation
  • frequency

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