Abstract
Engineering tunable graphene-semiconductor interfaces while simultaneously preserving the superior properties of graphene is critical to graphene-based devices for electronic, optoelectronic, biomedical, and photoelectrochemical applications. Here, we demonstrate this challenge can be surmounted by constructing an interesting atomic Schottky junction via epitaxial growth of high-quality and uniform graphene on cubic SiC (3C-SiC). By tailoring the graphene layers, the junction structure described herein exhibits an atomic-scale tunable Schottky junction with an inherent built-in electric field, making it a perfect prototype to systematically comprehend interfacial electronic properties and transport mechanisms. As a proof-of-concept study, the atomic-scale-tuned Schottky junction is demonstrated to promote both the separation and transport of charge carriers in a typical photoelectrochemical system for solar-to-fuel conversion under low bias. Simultaneously, the as-grown monolayer graphene with an extremely high conductivity protects the surface of 3C-SiC from photocorrosion and energetically delivers charge carriers to the loaded cocatalyst, achieving a synergetic enhancement of the catalytic stability and efficiency.
Original language | English |
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Pages (from-to) | 4905-4915 |
Number of pages | 11 |
Journal | ACS Nano |
Volume | 14 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2020 |
Subject classification (UKÄ)
- Condensed Matter Physics
Free keywords
- CO2 reduction
- graphene
- photoelectrochemistry
- Schottky junction
- SiC