Axial InP Nanowire Tandem Junction Grown on a Silicon Substrate

Magnus Heurlin; Peter Wickert; Stefan Fält; Magnus Borgström; Knut Deppert; Lars Samuelson; Martin Magnusson

doi:10.1021/nl2004219

Axial InP Nanowire Tandem Junction Grown on a Silicon Substrate

Magnus Heurlin, Peter Wickert, Stefan Fält, Magnus Borgström, Knut Deppert, Lars Samuelson, Martin Magnusson

Research output: Contribution to journal › Article › peer-review

Abstract

Tandem InP nanowire pn-junctions have been grown on a Si substrate using metal-organic vapor phase epitaxy. In situ HCl etching allowed the different subcomponents to be stacked on top of each other in the axial extension of the nanowires without detrimental radial growth. Electro-optical measurements on a single nanowire tandem pn-junction device show an open-circuit voltage of 1.15 V under illumination close to 1 sun, which is an increase of 67% compared to a single pn-junction device.

Original language	English
Pages (from-to)	2028-2031
Journal	Nano Letters
Volume	11
Issue number	5
DOIs	https://doi.org/10.1021/nl2004219
Publication status	Published - 2011

Subject classification (UKÄ)

Nano-technology
Condensed Matter Physics (including Material Physics, Nano Physics)

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10.1021/nl2004219

1 Doctoral Thesis (compilation)

Growth of Semiconductor Nanowires for Solar Cell Applications
Heurlin, M., 2015, 148 p.
Research output: Thesis › Doctoral Thesis (compilation)

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abstract = "Tandem InP nanowire pn-junctions have been grown on a Si substrate using metal-organic vapor phase epitaxy. In situ HCl etching allowed the different subcomponents to be stacked on top of each other in the axial extension of the nanowires without detrimental radial growth. Electro-optical measurements on a single nanowire tandem pn-junction device show an open-circuit voltage of 1.15 V under illumination close to 1 sun, which is an increase of 67% compared to a single pn-junction device.",

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AU - Heurlin, Magnus

AU - Wickert, Peter

AU - Fält, Stefan

AU - Borgström, Magnus

AU - Deppert, Knut

AU - Samuelson, Lars

AU - Magnusson, Martin

PY - 2011

Y1 - 2011

N2 - Tandem InP nanowire pn-junctions have been grown on a Si substrate using metal-organic vapor phase epitaxy. In situ HCl etching allowed the different subcomponents to be stacked on top of each other in the axial extension of the nanowires without detrimental radial growth. Electro-optical measurements on a single nanowire tandem pn-junction device show an open-circuit voltage of 1.15 V under illumination close to 1 sun, which is an increase of 67% compared to a single pn-junction device.

AB - Tandem InP nanowire pn-junctions have been grown on a Si substrate using metal-organic vapor phase epitaxy. In situ HCl etching allowed the different subcomponents to be stacked on top of each other in the axial extension of the nanowires without detrimental radial growth. Electro-optical measurements on a single nanowire tandem pn-junction device show an open-circuit voltage of 1.15 V under illumination close to 1 sun, which is an increase of 67% compared to a single pn-junction device.

U2 - 10.1021/nl2004219

DO - 10.1021/nl2004219

M3 - Article

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SN - 1530-6992

VL - 11

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JO - Nano Letters

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ER -

Axial InP Nanowire Tandem Junction Grown on a Silicon Substrate

Abstract

Subject classification (UKÄ)

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Research output

Growth of Semiconductor Nanowires for Solar Cell Applications

Cite this