Axial InP Nanowire Tandem Junction Grown on a Silicon Substrate

Magnus Heurlin, Peter Wickert, Stefan Fält, Magnus Borgström, Knut Deppert, Lars Samuelson, Martin Magnusson

Research output: Contribution to journalArticlepeer-review

101 Citations (SciVal)

Abstract

Tandem InP nanowire pn-junctions have been grown on a Si substrate using metal-organic vapor phase epitaxy. In situ HCl etching allowed the different subcomponents to be stacked on top of each other in the axial extension of the nanowires without detrimental radial growth. Electro-optical measurements on a single nanowire tandem pn-junction device show an open-circuit voltage of 1.15 V under illumination close to 1 sun, which is an increase of 67% compared to a single pn-junction device.
Original languageEnglish
Pages (from-to)2028-2031
JournalNano Letters
Volume11
Issue number5
DOIs
Publication statusPublished - 2011

Subject classification (UKÄ)

  • Nano Technology

Fingerprint

Dive into the research topics of 'Axial InP Nanowire Tandem Junction Grown on a Silicon Substrate'. Together they form a unique fingerprint.

Cite this