Axial InP Nanowire Tandem Junction Grown on a Silicon Substrate

Magnus Heurlin, Peter Wickert, Stefan Fält, Magnus Borgström, Knut Deppert, Lars Samuelson, Martin Magnusson

Research output: Contribution to journalArticlepeer-review


Tandem InP nanowire pn-junctions have been grown on a Si substrate using metal-organic vapor phase epitaxy. In situ HCl etching allowed the different subcomponents to be stacked on top of each other in the axial extension of the nanowires without detrimental radial growth. Electro-optical measurements on a single nanowire tandem pn-junction device show an open-circuit voltage of 1.15 V under illumination close to 1 sun, which is an increase of 67% compared to a single pn-junction device.
Original languageEnglish
Pages (from-to)2028-2031
JournalNano Letters
Issue number5
Publication statusPublished - 2011

Subject classification (UKÄ)

  • Nano Technology
  • Condensed Matter Physics


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