Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

Pyry Kivisaari; Toufik Sadi; Jingrui Li; Vihar Georgiev; Jani Oksanen; Patrick Rinke; Jukka Tulkki

doi:10.1109/SISPAD.2015.7292342

Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

Pyry Kivisaari, Toufik Sadi, Jingrui Li, Vihar Georgiev, Jani Oksanen, Patrick Rinke, Jukka Tulkki

Solid State Physics

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

Abstract

We carry out bipolar Monte Carlo (MC) simulations of electron and hole transport in a multi-quantum well light-emitting diode with an electron-blocking layer. The MC simulation accounts for the most important interband recombination and intraband scattering processes and solves self-consistently for the non-quasiequilibrium transport. The fully bipolar MC simulator results in better convergence than our previous Monte Carlo-drift-diffusion (MCDD) model and also shows clear signatures of hot holes. Accounting for both hot electron and hot hole effects increases the total current and decreases the efficiency especially at high bias voltages. We also present our in-house full band structure calculations for GaN to be coupled later with the MC simulation in order to enable even more detailed predictions of device operation.

Original language	English
Title of host publication	2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
Publisher	IEEE - Institute of Electrical and Electronics Engineers Inc.
Pages	393-396
Number of pages	4
ISBN (Electronic)	9781467378581
DOIs	https://doi.org/10.1109/SISPAD.2015.7292342
Publication status	Published - 2015 Oct 5
Event	20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015 - Washington, United States Duration: 2015 Sept 9 → 2015 Sept 11

Conference

Conference	20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
Country/Territory	United States
City	Washington
Period	2015/09/09 → 2015/09/11

Subject classification (UKÄ)

Other Electrical Engineering, Electronic Engineering, Information Engineering

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10.1109/SISPAD.2015.7292342

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Kivisaari, P., Sadi, T., Li, J., Georgiev, V., Oksanen, J., Rinke, P., & Tulkki, J. (2015). Bipolar Monte Carlo simulation of hot carriers in III-N LEDs. In 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015 (pp. 393-396). Article 7292342 IEEE - Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2015.7292342

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title = "Bipolar Monte Carlo simulation of hot carriers in III-N LEDs",

abstract = "We carry out bipolar Monte Carlo (MC) simulations of electron and hole transport in a multi-quantum well light-emitting diode with an electron-blocking layer. The MC simulation accounts for the most important interband recombination and intraband scattering processes and solves self-consistently for the non-quasiequilibrium transport. The fully bipolar MC simulator results in better convergence than our previous Monte Carlo-drift-diffusion (MCDD) model and also shows clear signatures of hot holes. Accounting for both hot electron and hot hole effects increases the total current and decreases the efficiency especially at high bias voltages. We also present our in-house full band structure calculations for GaN to be coupled later with the MC simulation in order to enable even more detailed predictions of device operation.",

author = "Pyry Kivisaari and Toufik Sadi and Jingrui Li and Vihar Georgiev and Jani Oksanen and Patrick Rinke and Jukka Tulkki",

year = "2015",

month = oct,

day = "5",

doi = "10.1109/SISPAD.2015.7292342",

language = "English",

pages = "393--396",

booktitle = "2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015 ; Conference date: 09-09-2015 Through 11-09-2015",

}

Kivisaari, P, Sadi, T, Li, J, Georgiev, V, Oksanen, J, Rinke, P & Tulkki, J 2015, Bipolar Monte Carlo simulation of hot carriers in III-N LEDs. in 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015., 7292342, IEEE - Institute of Electrical and Electronics Engineers Inc., pp. 393-396, 20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015, Washington, United States, 2015/09/09. https://doi.org/10.1109/SISPAD.2015.7292342

Bipolar Monte Carlo simulation of hot carriers in III-N LEDs. / Kivisaari, Pyry; Sadi, Toufik; Li, Jingrui et al.
2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015. IEEE - Institute of Electrical and Electronics Engineers Inc., 2015. p. 393-396 7292342.

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

TY - GEN

T1 - Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

AU - Kivisaari, Pyry

AU - Sadi, Toufik

AU - Li, Jingrui

AU - Georgiev, Vihar

AU - Oksanen, Jani

AU - Rinke, Patrick

AU - Tulkki, Jukka

PY - 2015/10/5

Y1 - 2015/10/5

N2 - We carry out bipolar Monte Carlo (MC) simulations of electron and hole transport in a multi-quantum well light-emitting diode with an electron-blocking layer. The MC simulation accounts for the most important interband recombination and intraband scattering processes and solves self-consistently for the non-quasiequilibrium transport. The fully bipolar MC simulator results in better convergence than our previous Monte Carlo-drift-diffusion (MCDD) model and also shows clear signatures of hot holes. Accounting for both hot electron and hot hole effects increases the total current and decreases the efficiency especially at high bias voltages. We also present our in-house full band structure calculations for GaN to be coupled later with the MC simulation in order to enable even more detailed predictions of device operation.

AB - We carry out bipolar Monte Carlo (MC) simulations of electron and hole transport in a multi-quantum well light-emitting diode with an electron-blocking layer. The MC simulation accounts for the most important interband recombination and intraband scattering processes and solves self-consistently for the non-quasiequilibrium transport. The fully bipolar MC simulator results in better convergence than our previous Monte Carlo-drift-diffusion (MCDD) model and also shows clear signatures of hot holes. Accounting for both hot electron and hot hole effects increases the total current and decreases the efficiency especially at high bias voltages. We also present our in-house full band structure calculations for GaN to be coupled later with the MC simulation in order to enable even more detailed predictions of device operation.

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U2 - 10.1109/SISPAD.2015.7292342

DO - 10.1109/SISPAD.2015.7292342

M3 - Paper in conference proceeding

AN - SCOPUS:84959337323

SP - 393

EP - 396

BT - 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015

PB - IEEE - Institute of Electrical and Electronics Engineers Inc.

T2 - 20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015

Y2 - 9 September 2015 through 11 September 2015

ER -

Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

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