Bloch gain in AlGaAs/GaAs semiconductor superlattices

N Sekine, Y Shimada, K Hirakawa, Maxim Odnoblioudov, Koung-An Chao

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceedingpeer-review

Abstract

We have investigated terahertz (THz) emission due to dynamical electron transport in wide miniband GaAs/Al0.3Ga0.7As superlattices. By noting that the time-domain THz emission spectroscopy contains the information on the step response of the electron system to the bias electric field, the obtained THz spectra were compared with the high-frequency conductivities predicted for miniband transport. Excellent agreement between theory and experiment strongly supports that the THz gain due to Bloch oscillating electrons persists at least up to 1.7 THz. It was also found that Zener tunneling into the second miniband sets the high-frequency limit of the THz gain for the samples studied here. (C) 2003 Elsevier B.V. All rights reserved.
Original languageEnglish
Title of host publicationProceedings of the Eleventh International Conference on Modulated Semiconductor Structures (Physica E: Low-dimensional Systems and Nanostructures)
PublisherElsevier
Pages858-862
Volume21
DOIs
Publication statusPublished - 2004
EventEleventh International Conference on Modulated Semiconductor Structures - Nara, Japan
Duration: 2003 Jul 142003 Jul 18

Publication series

Name
Number2-4
Volume21
ISSN (Print)1386-9477

Conference

ConferenceEleventh International Conference on Modulated Semiconductor Structures
Country/TerritoryJapan
CityNara
Period2003/07/142003/07/18

Subject classification (UKÄ)

  • Condensed Matter Physics (including Material Physics, Nano Physics)

Free keywords

  • Bloch gain
  • Terahertz
  • superlattice

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