Carbon-oxygen-related complexes in irradiated and heat-treated silicon: IR absorption studies

LI Murin, VP Markevich, Lennart Lindström, Mats Kleverman, Jennie Hermansson, T Hallberg, BG Svensson

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34 Citations (SciVal)


Carbon-oxygen-related complexes in Si crystals enriched with either oxygen (O-16,O-18) or carbon (C-12, C-13) isotopes were investigated by Fourier Transform infrared absorption spectroscopy. The samples were irradiated with electrons at room temperature as well as at elevated temperatures (400-600 degreesC). The oxygen isotopic shifts of the local vibrational modes related to C3 and C4 centers were determined. Several new lines were found to appear after irradiation at elevated temperatures. Possible assignments of them are suggested.
Original languageEnglish
Pages (from-to)57-62
JournalSolid State Phenomena
Publication statusPublished - 2002

Subject classification (UKÄ)

  • Condensed Matter Physics


  • complexes
  • carbon
  • local vibrational modes
  • silicon
  • oxygen


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