Carrier Recombination Dynamics in Sulfur-Doped InP Nanowires.

Wei Zhang; Sebastian Lehmann; Kilian Mergenthaler; Jesper Wallentin; Magnus Borgström; Mats-Erik Pistol; Arkady Yartsev

doi:10.1021/acs.nanolett.5b02022

Carrier Recombination Dynamics in Sulfur-Doped InP Nanowires.

Wei Zhang, Sebastian Lehmann, Kilian Mergenthaler, Jesper Wallentin, Magnus Borgström, Mats-Erik Pistol, Arkady Yartsev

Research output: Contribution to journal › Article › peer-review

Abstract

Measuring lifetime of photogenerated charges in semiconductor nanowires (NW) is important for understanding light-induced processes in these materials and is relevant for their photovoltaic and photodetector applications. In this paper, we investigate the dynamics of photogenerated charge carriers in a series of as-grown InP NW with different levels of sulfur (S) doping. We observe that photoluminescence (PL) decay time as well as integrated PL intensity decreases with increasing S doping. We attribute these observations to hole trapping with the trap density increased due to S-doping level followed by nonradiative recombination of trapped charges. This assignment is proven by observation of the trap saturation in three independent experiments: via excitation power and repetition rate PL lifetime dependencies and by PL pump-probe experiment.

Original language	English
Pages (from-to)	7238-7244
Journal	Nano Letters
Volume	15
Issue number	11
DOIs	https://doi.org/10.1021/acs.nanolett.5b02022
Publication status	Published - 2015

Bibliographical note

The information about affiliations in this record was updated in December 2015.
The record was previously connected to the following departments: Synchrotron Radiation Research (011013009), Solid State Physics (011013006), Chemical Physics (S) (011001060)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Subject classification (UKÄ)

Nano-technology

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10.1021/acs.nanolett.5b02022

Cite this

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title = "Carrier Recombination Dynamics in Sulfur-Doped InP Nanowires.",

abstract = "Measuring lifetime of photogenerated charges in semiconductor nanowires (NW) is important for understanding light-induced processes in these materials and is relevant for their photovoltaic and photodetector applications. In this paper, we investigate the dynamics of photogenerated charge carriers in a series of as-grown InP NW with different levels of sulfur (S) doping. We observe that photoluminescence (PL) decay time as well as integrated PL intensity decreases with increasing S doping. We attribute these observations to hole trapping with the trap density increased due to S-doping level followed by nonradiative recombination of trapped charges. This assignment is proven by observation of the trap saturation in three independent experiments: via excitation power and repetition rate PL lifetime dependencies and by PL pump-probe experiment.",

author = "Wei Zhang and Sebastian Lehmann and Kilian Mergenthaler and Jesper Wallentin and Magnus Borgstr{\"o}m and Mats-Erik Pistol and Arkady Yartsev",

note = "The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Synchrotron Radiation Research (011013009), Solid State Physics (011013006), Chemical Physics (S) (011001060)",

year = "2015",

doi = "10.1021/acs.nanolett.5b02022",

language = "English",

volume = "15",

pages = "7238--7244",

journal = "Nano Letters",

issn = "1530-6992",

publisher = "The American Chemical Society (ACS)",

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T1 - Carrier Recombination Dynamics in Sulfur-Doped InP Nanowires.

AU - Zhang, Wei

AU - Lehmann, Sebastian

AU - Mergenthaler, Kilian

AU - Wallentin, Jesper

AU - Borgström, Magnus

AU - Pistol, Mats-Erik

AU - Yartsev, Arkady

N1 - The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Synchrotron Radiation Research (011013009), Solid State Physics (011013006), Chemical Physics (S) (011001060)

PY - 2015

Y1 - 2015

N2 - Measuring lifetime of photogenerated charges in semiconductor nanowires (NW) is important for understanding light-induced processes in these materials and is relevant for their photovoltaic and photodetector applications. In this paper, we investigate the dynamics of photogenerated charge carriers in a series of as-grown InP NW with different levels of sulfur (S) doping. We observe that photoluminescence (PL) decay time as well as integrated PL intensity decreases with increasing S doping. We attribute these observations to hole trapping with the trap density increased due to S-doping level followed by nonradiative recombination of trapped charges. This assignment is proven by observation of the trap saturation in three independent experiments: via excitation power and repetition rate PL lifetime dependencies and by PL pump-probe experiment.

AB - Measuring lifetime of photogenerated charges in semiconductor nanowires (NW) is important for understanding light-induced processes in these materials and is relevant for their photovoltaic and photodetector applications. In this paper, we investigate the dynamics of photogenerated charge carriers in a series of as-grown InP NW with different levels of sulfur (S) doping. We observe that photoluminescence (PL) decay time as well as integrated PL intensity decreases with increasing S doping. We attribute these observations to hole trapping with the trap density increased due to S-doping level followed by nonradiative recombination of trapped charges. This assignment is proven by observation of the trap saturation in three independent experiments: via excitation power and repetition rate PL lifetime dependencies and by PL pump-probe experiment.

UR - https://www.scopus.com/pages/publications/84947080875

U2 - 10.1021/acs.nanolett.5b02022

DO - 10.1021/acs.nanolett.5b02022

M3 - Article

C2 - 26421505

SN - 1530-6992

VL - 15

SP - 7238

EP - 7244

JO - Nano Letters

JF - Nano Letters

IS - 11

ER -

Carrier Recombination Dynamics in Sulfur-Doped InP Nanowires.

Abstract

Bibliographical note

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