Carrier transport in broken-gap heterostructures tuned by a magnetic field

Karin Nilsson, A. Zakharova, I. Semenikhin, Koung-An Chao

Research output: Contribution to journalArticlepeer-review

Abstract

We have performed an eight-band k center dot p model calculation on the current-voltage (I-V) curves associated with interband magnetotransport in a double-barrier broken-gap heterostructure using the Burt-Foreman multiband envelope function theory and the scattering matrix approach. In a sample with very thin barriers, the broadening Gamma(0) of a virtual bound state with energy E-0 can be very large. Depending on the relative values of Gamma(0) and parallel to E-0-E-F parallel to, where E-F is the Fermi energy, the behavior of the I-V curve can be either of Ohmic type or of resonant-tunneling type, and can be tuned from one to the other by changing the applied magnetic-field strength.
Original languageEnglish
JournalPhysical Review B (Condensed Matter and Materials Physics)
Volume75
Issue number20
DOIs
Publication statusPublished - 2007

Subject classification (UKÄ)

  • Condensed Matter Physics

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