@inproceedings{fa30dab75c75409fa036964dc99554ba,
title = "Characterization of Border Traps in III-V MOSFETs Using an RF Transconductance Method",
abstract = "The significant defect-induced increase in transconductance at high frequencies in some III-V MOSFETs is utilized to reveal the spatial distribution and energy profile of traps in the gate dielectric. The frequency response of the border traps is modeled as a distributed RC network inserted in the small signal model. Surface-channel InGaAs MOSFETs with Al2O3/HfO2 high-k gate dielectric are evaluated; especially the effects of inserting an InP cap layer in the gate stack.",
author = "Sofia Johansson and Jiongjiong Mo and Erik Lind",
year = "2013",
language = "English",
publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",
pages = "53--56",
booktitle = "2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)",
address = "United States",
note = "43rd Conference on European Solid-State Device Research ; Conference date: 16-09-2013 Through 20-09-2013",
}