Characterization of GaSb nanowires grown by MOVPE

Mattias Borg; Kimberly Dick Thelander; Henrik Nilsson; Niklas Sköld; Jakob Wagner; Philippe Caroff; Lars-Erik Wernersson

doi:10.1016/j.jcrysgro.2008.07.061

Characterization of GaSb nanowires grown by MOVPE

Mattias Borg, Kimberly Dick Thelander, Henrik Nilsson, Niklas Sköld, Jakob Wagner, Philippe Caroff, Lars-Erik Wernersson

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

Abstract

We report the growth and characterization of GaSb nanowires grown by MOVPE. The structural properties of the nanowires are investigated by the means of transmission electron microscopy, X-ray diffraction and single nanowire photoluminescence. The measurements confirm a high material quality in the GaSb nanowires. Also, a back-gated nanowire transistor structure is used to extract values for the polarity and resistivity of the GaSb. Finally, a simple kinetic model is presented to explain the non-linear time dependence of the GaSb nanowire growth. (C) 2008 Elsevier B.V. All rights reserved.

Original language	English
Title of host publication	Journal of Chrystal Growth
Publisher	Elsevier
Pages	5119-5122
Volume	310
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.07.061
Publication status	Published - 2008
Event	14th International Conference on Metal Organic Vapor Phase Epitaxy - Metz, FRANCE Duration: 2008 Jun 1 → 2008 Jun 6

Publication series

Name
Number	23
Volume	310
ISSN (Print)	0022-0248

Conference

Conference	14th International Conference on Metal Organic Vapor Phase Epitaxy
Period	2008/06/01 → 2008/06/06

Bibliographical note

The information about affiliations in this record was updated in December 2015.
The record was previously connected to the following departments: Solid State Physics (011013006), Electrical and information technology (011041010), Polymer and Materials Chemistry (LTH) (011001041)

Subject classification (UKÄ)

Condensed Matter Physics
Electrical Engineering, Electronic Engineering, Information Engineering

Free keywords

Gallium
Metalorganic vapor phase epitaxy
compounds
Antimonides
Nanowires

Access to Document

10.1016/j.jcrysgro.2008.07.061

1 Doctoral Thesis (compilation)

Antimonide Heterostructure Nanowires - Growth, Physics and Devices
Borg, M., 2012, 164 p.
Research output: Thesis › Doctoral Thesis (compilation)

File

Cite this

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title = "Characterization of GaSb nanowires grown by MOVPE",

abstract = "We report the growth and characterization of GaSb nanowires grown by MOVPE. The structural properties of the nanowires are investigated by the means of transmission electron microscopy, X-ray diffraction and single nanowire photoluminescence. The measurements confirm a high material quality in the GaSb nanowires. Also, a back-gated nanowire transistor structure is used to extract values for the polarity and resistivity of the GaSb. Finally, a simple kinetic model is presented to explain the non-linear time dependence of the GaSb nanowire growth. (C) 2008 Elsevier B.V. All rights reserved.",

keywords = "Gallium, Metalorganic vapor phase epitaxy, compounds, Antimonides, Nanowires",

author = "Mattias Borg and {Dick Thelander}, Kimberly and Henrik Nilsson and Niklas Sk{\"o}ld and Jakob Wagner and Philippe Caroff and Lars-Erik Wernersson",

note = "The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Electrical and information technology (011041010), Polymer and Materials Chemistry (LTH) (011001041); 14th International Conference on Metal Organic Vapor Phase Epitaxy ; Conference date: 01-06-2008 Through 06-06-2008",

year = "2008",

doi = "10.1016/j.jcrysgro.2008.07.061",

language = "English",

volume = "310",

publisher = "Elsevier",

number = "23",

pages = "5119--5122",

booktitle = "Journal of Chrystal Growth",

address = "United States",

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TY - GEN

T1 - Characterization of GaSb nanowires grown by MOVPE

AU - Borg, Mattias

AU - Dick Thelander, Kimberly

AU - Nilsson, Henrik

AU - Sköld, Niklas

AU - Wagner, Jakob

AU - Caroff, Philippe

AU - Wernersson, Lars-Erik

N1 - The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Electrical and information technology (011041010), Polymer and Materials Chemistry (LTH) (011001041)

PY - 2008

Y1 - 2008

N2 - We report the growth and characterization of GaSb nanowires grown by MOVPE. The structural properties of the nanowires are investigated by the means of transmission electron microscopy, X-ray diffraction and single nanowire photoluminescence. The measurements confirm a high material quality in the GaSb nanowires. Also, a back-gated nanowire transistor structure is used to extract values for the polarity and resistivity of the GaSb. Finally, a simple kinetic model is presented to explain the non-linear time dependence of the GaSb nanowire growth. (C) 2008 Elsevier B.V. All rights reserved.

AB - We report the growth and characterization of GaSb nanowires grown by MOVPE. The structural properties of the nanowires are investigated by the means of transmission electron microscopy, X-ray diffraction and single nanowire photoluminescence. The measurements confirm a high material quality in the GaSb nanowires. Also, a back-gated nanowire transistor structure is used to extract values for the polarity and resistivity of the GaSb. Finally, a simple kinetic model is presented to explain the non-linear time dependence of the GaSb nanowire growth. (C) 2008 Elsevier B.V. All rights reserved.

KW - Gallium

KW - Metalorganic vapor phase epitaxy

KW - compounds

KW - Antimonides

KW - Nanowires

U2 - 10.1016/j.jcrysgro.2008.07.061

DO - 10.1016/j.jcrysgro.2008.07.061

M3 - Paper in conference proceeding

VL - 310

SP - 5119

EP - 5122

BT - Journal of Chrystal Growth

PB - Elsevier

T2 - 14th International Conference on Metal Organic Vapor Phase Epitaxy

Y2 - 1 June 2008 through 6 June 2008

ER -

Characterization of GaSb nanowires grown by MOVPE

Abstract

Publication series

Conference

Bibliographical note

Subject classification (UKÄ)

Free keywords

Access to Document

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Research output

Antimonide Heterostructure Nanowires - Growth, Physics and Devices

Cite this