Characterization of oxygen dimer-enriched silicon detectors

V Boisvert, Lennart Lindström, M Moll, L I Murin, I Pintilie

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5 Citations (SciVal)


Various types of silicon material and silicon p(+)n diodes have been treated to increase the concentration of the oxygen dimer (02) defect. This was done by exposing the bulk material and the diodes to 6 MeV electrons at a temperature of about 350 degrees C. FTIR spectroscopy has been performed on the processed material confirming the formation of oxygen dimer defects in Czochralski silicon pieces. We also show results from TSC characterization on processed diodes. Finally, we investigated the influence of the dimer enrichment process on the depletion voltage of silicon diodes and performed 24 GeV/c proton irradiations to study the evolution of the macroscopic diode characteristics as a function of fluence.
Original languageEnglish
Pages (from-to)49-55
JournalNuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment
Issue number1-2
Publication statusPublished - 2005

Subject classification (UKÄ)

  • Accelerator Physics and Instrumentation


  • irradiation
  • electron
  • oxygen dimer
  • silicon detector
  • radiation hardness
  • FTIR
  • proton irradiation


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