Characterization of oxygen dimer-enriched silicon detectors

V Boisvert; Lennart Lindström; M Moll; L I Murin; I Pintilie

doi:10.1016/j.nima.2005.06.005

Characterization of oxygen dimer-enriched silicon detectors

V Boisvert, Lennart Lindström, M Moll, L I Murin, I Pintilie

Solid State Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Various types of silicon material and silicon p(+)n diodes have been treated to increase the concentration of the oxygen dimer (02) defect. This was done by exposing the bulk material and the diodes to 6 MeV electrons at a temperature of about 350 degrees C. FTIR spectroscopy has been performed on the processed material confirming the formation of oxygen dimer defects in Czochralski silicon pieces. We also show results from TSC characterization on processed diodes. Finally, we investigated the influence of the dimer enrichment process on the depletion voltage of silicon diodes and performed 24 GeV/c proton irradiations to study the evolution of the macroscopic diode characteristics as a function of fluence.

Original language	English
Pages (from-to)	49-55
Journal	Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment
Volume	552
Issue number	1-2
DOIs	https://doi.org/10.1016/j.nima.2005.06.005
Publication status	Published - 2005

Subject classification (UKÄ)

Accelerator Physics and Instrumentation

Free keywords

irradiation
electron
oxygen dimer
silicon detector
radiation hardness
FTIR
proton irradiation

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10.1016/j.nima.2005.06.005

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title = "Characterization of oxygen dimer-enriched silicon detectors",

abstract = "Various types of silicon material and silicon p(+)n diodes have been treated to increase the concentration of the oxygen dimer (02) defect. This was done by exposing the bulk material and the diodes to 6 MeV electrons at a temperature of about 350 degrees C. FTIR spectroscopy has been performed on the processed material confirming the formation of oxygen dimer defects in Czochralski silicon pieces. We also show results from TSC characterization on processed diodes. Finally, we investigated the influence of the dimer enrichment process on the depletion voltage of silicon diodes and performed 24 GeV/c proton irradiations to study the evolution of the macroscopic diode characteristics as a function of fluence.",

keywords = "irradiation, electron, oxygen dimer, silicon detector, radiation hardness, FTIR, proton irradiation",

author = "V Boisvert and Lennart Lindstr{\"o}m and M Moll and Murin, {L I} and I Pintilie",

year = "2005",

doi = "10.1016/j.nima.2005.06.005",

language = "English",

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pages = "49--55",

journal = "Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment",

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TY - JOUR

T1 - Characterization of oxygen dimer-enriched silicon detectors

AU - Boisvert, V

AU - Lindström, Lennart

AU - Moll, M

AU - Murin, L I

AU - Pintilie, I

PY - 2005

Y1 - 2005

N2 - Various types of silicon material and silicon p(+)n diodes have been treated to increase the concentration of the oxygen dimer (02) defect. This was done by exposing the bulk material and the diodes to 6 MeV electrons at a temperature of about 350 degrees C. FTIR spectroscopy has been performed on the processed material confirming the formation of oxygen dimer defects in Czochralski silicon pieces. We also show results from TSC characterization on processed diodes. Finally, we investigated the influence of the dimer enrichment process on the depletion voltage of silicon diodes and performed 24 GeV/c proton irradiations to study the evolution of the macroscopic diode characteristics as a function of fluence.

AB - Various types of silicon material and silicon p(+)n diodes have been treated to increase the concentration of the oxygen dimer (02) defect. This was done by exposing the bulk material and the diodes to 6 MeV electrons at a temperature of about 350 degrees C. FTIR spectroscopy has been performed on the processed material confirming the formation of oxygen dimer defects in Czochralski silicon pieces. We also show results from TSC characterization on processed diodes. Finally, we investigated the influence of the dimer enrichment process on the depletion voltage of silicon diodes and performed 24 GeV/c proton irradiations to study the evolution of the macroscopic diode characteristics as a function of fluence.

KW - irradiation

KW - electron

KW - oxygen dimer

KW - silicon detector

KW - radiation hardness

KW - FTIR

KW - proton irradiation

U2 - 10.1016/j.nima.2005.06.005

DO - 10.1016/j.nima.2005.06.005

M3 - Article

SN - 0167-5087

VL - 552

SP - 49

EP - 55

JO - Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment

JF - Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment

IS - 1-2

ER -

Characterization of oxygen dimer-enriched silicon detectors

Abstract

Subject classification (UKÄ)

Free keywords

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