CMOS Transceiver Front-Ends in Mobile Communication Handsets - Architectures and Building Blocks

Pieternella Cijvat

CMOS Transceiver Front-Ends in Mobile Communication Handsets - Architectures and Building Blocks

Pieternella Cijvat

Department of Electrical and Information Technology

Research output: Thesis › Doctoral Thesis (compilation)

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Abstract

For mobile communication systems in the low-GHz range, CMOS has increasingly become the technology of choice, and the level of integration in mobile handsets has risen. The use of off-chip components, which increases the handset assembly time and costs, is preferably avoided. However, integrating a complete transceiver on a single chip leads to disturbances between building blocks. This imposes new and more stringent requirements on building block and transceiver performance, as well as impacts the choice of transceiver architecture.

In the general introduction, an overview is given of front-end receiver and transmitter aspects as well as RF CMOS technology. This includes the impact of mobile communication system specifications on architectures and building blocks, transistor and monolithic inductor modeling, and disturbance issues. Special attention is given to power amplifiers, the most challenging building blocks in CMOS transceivers. Papers I, II and III address CMOS receiver front-end aspects and implementations, while in papers IV and V design and challenges of CMOS power amplifiers are described.

Original language	English
Qualification	Doctor
Awarding Institution	Department of Electrical and Information Technology
Supervisors/Advisors	[unknown], [unknown], Supervisor, External person
Award date	2004 Dec 9
Publisher	Department of Electroscience, Lund University
Publication status	Published - 2004

Bibliographical note

Defence details

Date: 2004-12-09
Time: 10:15
Place: Room E:1406 in E-building, Ole Römers Väg 3, Lund Institute of Technology

External reviewer(s)

Name: Andreani, Pietro
Title: Prof
Affiliation: Denmark

---

Article: E. Cijvat, "A 0.35 um CMOS DCS Front-end with Fully Integrated VCO", in Proceedings of the 8th IEEE International Conference on Electronics, Circuits and Systems (ICECS 2001), Malta, 2001, pp. 1595-1598.

Article: S. Tadjpour, E. Cijvat, E. Hegazi and A. Abidi, "A 900 MHz Dual Conversion, Low-IF GSM Receiver in 0.35 um CMOS", IEEE Journal of Solid-State Circuits, Vol. 36, No.12, pp. 1992 - 2002, Dec. 2001.

Article: E. Cijvat, S. Tadjpour and A.A. Abidi, "Spurious mixing of off-channel signals in a wireless receiver and the choice of IF", IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing, Vol. 49, No. 8, pp. 539 - 544, Aug. 2002.

Article: E. Cijvat and H. Sjöland, "A Fully Integrated 2.45 GHz 0.25 um CMOS Power Amplifier", in Proceedings of the 10th IEEE International Conference on Electronics, Circuits and Systems (ICECS 2003), United Arab Emirates, 2003, pp. 1094-1097.

Article: E. Cijvat, N. Troedsson and H. Sjöland, "A Fully Integrated CMOS RF Power Amplifier with Internal Frequency Doubling", submitted to Analog Integrated Circuits and Signal Processing.

Subject classification (UKÄ)

Electrical Engineering, Electronic Engineering, Information Engineering

Free keywords

RF CMOS
Wireless Communication
Receiver
Transmitter
Power Amplifier
Harmonic Distortion
Electrical engineering
Elektroteknik
Telecommunication engineering
Telekommunikationsteknik

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thesis_EllieCijvatFinal published version, 1.39 MB

Cite this

@phdthesis{a8bd79be13a2420eb62ffba1d240bc3d,

title = "CMOS Transceiver Front-Ends in Mobile Communication Handsets - Architectures and Building Blocks",

abstract = "For mobile communication systems in the low-GHz range, CMOS has increasingly become the technology of choice, and the level of integration in mobile handsets has risen. The use of off-chip components, which increases the handset assembly time and costs, is preferably avoided. However, integrating a complete transceiver on a single chip leads to disturbances between building blocks. This imposes new and more stringent requirements on building block and transceiver performance, as well as impacts the choice of transceiver architecture. In the general introduction, an overview is given of front-end receiver and transmitter aspects as well as RF CMOS technology. This includes the impact of mobile communication system specifications on architectures and building blocks, transistor and monolithic inductor modeling, and disturbance issues. Special attention is given to power amplifiers, the most challenging building blocks in CMOS transceivers. Papers I, II and III address CMOS receiver front-end aspects and implementations, while in papers IV and V design and challenges of CMOS power amplifiers are described.",

keywords = "RF CMOS, Wireless Communication, Receiver, Transmitter, Power Amplifier, Harmonic Distortion, Electrical engineering, Elektroteknik, Telecommunication engineering, Telekommunikationsteknik",

author = "Pieternella Cijvat",

note = "Defence details Date: 2004-12-09 Time: 10:15 Place: Room E:1406 in E-building, Ole R{\"o}mers V{\"a}g 3, Lund Institute of Technology External reviewer(s) Name: Andreani, Pietro Title: Prof Affiliation: Denmark --- Article: E. Cijvat, {"}A 0.35 um CMOS DCS Front-end with Fully Integrated VCO{"}, in Proceedings of the 8th IEEE International Conference on Electronics, Circuits and Systems (ICECS 2001), Malta, 2001, pp. 1595-1598. Article: S. Tadjpour, E. Cijvat, E. Hegazi and A. Abidi, {"}A 900 MHz Dual Conversion, Low-IF GSM Receiver in 0.35 um CMOS{"}, IEEE Journal of Solid-State Circuits, Vol. 36, No.12, pp. 1992 - 2002, Dec. 2001. Article: E. Cijvat, S. Tadjpour and A.A. Abidi, {"}Spurious mixing of off-channel signals in a wireless receiver and the choice of IF{"}, IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing, Vol. 49, No. 8, pp. 539 - 544, Aug. 2002. Article: E. Cijvat and H. Sj{\"o}land, {"}A Fully Integrated 2.45 GHz 0.25 um CMOS Power Amplifier{"}, in Proceedings of the 10th IEEE International Conference on Electronics, Circuits and Systems (ICECS 2003), United Arab Emirates, 2003, pp. 1094-1097. Article: E. Cijvat, N. Troedsson and H. Sj{\"o}land, {"}A Fully Integrated CMOS RF Power Amplifier with Internal Frequency Doubling{"}, submitted to Analog Integrated Circuits and Signal Processing.",

year = "2004",

language = "English",

publisher = "Department of Electroscience, Lund University",

type = "Doctoral Thesis (compilation)",

school = "Department of Electrical and Information Technology",

}

TY - THES

T1 - CMOS Transceiver Front-Ends in Mobile Communication Handsets - Architectures and Building Blocks

AU - Cijvat, Pieternella

N1 - Defence details Date: 2004-12-09 Time: 10:15 Place: Room E:1406 in E-building, Ole Römers Väg 3, Lund Institute of Technology External reviewer(s) Name: Andreani, Pietro Title: Prof Affiliation: Denmark --- Article: E. Cijvat, "A 0.35 um CMOS DCS Front-end with Fully Integrated VCO", in Proceedings of the 8th IEEE International Conference on Electronics, Circuits and Systems (ICECS 2001), Malta, 2001, pp. 1595-1598. Article: S. Tadjpour, E. Cijvat, E. Hegazi and A. Abidi, "A 900 MHz Dual Conversion, Low-IF GSM Receiver in 0.35 um CMOS", IEEE Journal of Solid-State Circuits, Vol. 36, No.12, pp. 1992 - 2002, Dec. 2001. Article: E. Cijvat, S. Tadjpour and A.A. Abidi, "Spurious mixing of off-channel signals in a wireless receiver and the choice of IF", IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing, Vol. 49, No. 8, pp. 539 - 544, Aug. 2002. Article: E. Cijvat and H. Sjöland, "A Fully Integrated 2.45 GHz 0.25 um CMOS Power Amplifier", in Proceedings of the 10th IEEE International Conference on Electronics, Circuits and Systems (ICECS 2003), United Arab Emirates, 2003, pp. 1094-1097. Article: E. Cijvat, N. Troedsson and H. Sjöland, "A Fully Integrated CMOS RF Power Amplifier with Internal Frequency Doubling", submitted to Analog Integrated Circuits and Signal Processing.

PY - 2004

Y1 - 2004

N2 - For mobile communication systems in the low-GHz range, CMOS has increasingly become the technology of choice, and the level of integration in mobile handsets has risen. The use of off-chip components, which increases the handset assembly time and costs, is preferably avoided. However, integrating a complete transceiver on a single chip leads to disturbances between building blocks. This imposes new and more stringent requirements on building block and transceiver performance, as well as impacts the choice of transceiver architecture. In the general introduction, an overview is given of front-end receiver and transmitter aspects as well as RF CMOS technology. This includes the impact of mobile communication system specifications on architectures and building blocks, transistor and monolithic inductor modeling, and disturbance issues. Special attention is given to power amplifiers, the most challenging building blocks in CMOS transceivers. Papers I, II and III address CMOS receiver front-end aspects and implementations, while in papers IV and V design and challenges of CMOS power amplifiers are described.

AB - For mobile communication systems in the low-GHz range, CMOS has increasingly become the technology of choice, and the level of integration in mobile handsets has risen. The use of off-chip components, which increases the handset assembly time and costs, is preferably avoided. However, integrating a complete transceiver on a single chip leads to disturbances between building blocks. This imposes new and more stringent requirements on building block and transceiver performance, as well as impacts the choice of transceiver architecture. In the general introduction, an overview is given of front-end receiver and transmitter aspects as well as RF CMOS technology. This includes the impact of mobile communication system specifications on architectures and building blocks, transistor and monolithic inductor modeling, and disturbance issues. Special attention is given to power amplifiers, the most challenging building blocks in CMOS transceivers. Papers I, II and III address CMOS receiver front-end aspects and implementations, while in papers IV and V design and challenges of CMOS power amplifiers are described.

KW - RF CMOS

KW - Wireless Communication

KW - Receiver

KW - Transmitter

KW - Power Amplifier

KW - Harmonic Distortion

KW - Electrical engineering

KW - Elektroteknik

KW - Telecommunication engineering

KW - Telekommunikationsteknik

M3 - Doctoral Thesis (compilation)

PB - Department of Electroscience, Lund University

ER -

CMOS Transceiver Front-Ends in Mobile Communication Handsets - Architectures and Building Blocks

Abstract

Bibliographical note

Subject classification (UKÄ)

Free keywords

Access to Document

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Cite this