Abstract
Epitaxial III-V nanowhiskers have been grown with orientation in the [111]B and [100] directions. While the nature of the crystal structure in the (111)B type of whiskers varies more or less at random between hexagonal (wurtzite) and cubic (zincblende) structure, the (100) type whiskers are of single crystal zincblende structure. We show that the bounding surface facets of the whiskers are either {110} type (zincblende) or the related {1120} facets (wurtzite), giving a rectangular cross-section of (100) whiskers and a hexagonal cross section of (111)B whiskers. The variations in crystal structure and facet type are discussed in connection to the electronic properties of the whiskers and the choice of whisker type for applications in electronics and photonics
| Original language | English |
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| Title of host publication | 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science |
| Publisher | Lund University |
| Number of pages | 2 |
| Publication status | Published - 2002 |
| Event | Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) - Malmö, Sweden Duration: 2002 Jun 24 → 2002 Jun 28 |
Conference
| Conference | Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) |
|---|---|
| Country/Territory | Sweden |
| City | Malmö |
| Period | 2002/06/24 → 2002/06/28 |
Subject classification (UKÄ)
- Condensed Matter Physics (including Material Physics, Nano Physics)
Free keywords
- GaAs
- InAs
- InP
- electronics
- B
- photonics
- B whiskers
- crystal structure
- epitaxial III-V nanowhiskers
- zincblende
- hexagonal structure
- wurtzite
- cubic structure
- bounding surface facets
- rectangular cross section
- hexagonal cross section
- electronic properties
- facet type