Controllable oxidation of h-BN monolayer on Ir(111) studied by core-level spectroscopies

K. A. Simonov, Nikolay Vinogradov, May Ling Ng, A. S. Vinogradov, N. Martensson, Alexei Preobrajenski

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The effect of atomic oxygen adsorption on the structure and electronic properties of monolayer hexagonal boron nitride (h-BN) grown on Ir(111) has been studied using near edge X-ray absorption fine structure spectroscopy (NEXAFS), photoelectron spectroscopy (PES), and low-energy electron diffraction (LEED). It has been shown that the oxidation of the h-BN monolayer occurs through a gradual substitution of N by O in the h-BN lattice. This process leads to the formation of defect sites corresponding to three different types of the B atom environment (BN3-xOx with x=1,2,3). The oxidation of the h-BN monolayer is very different from the case of graphene on Ir(111), where adsorption of atomic oxygen results mainly in the formation of epoxy groups [J. Phys. Chem. C. 115, 9568 (2011)]. A post-annealing of the h-BN monolayer after oxygen exposure results in further destruction of the B N bonds and formation of a B2O3-like structure. (C) 2011 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)564-570
JournalSurface Science
Issue number3-4
Publication statusPublished - 2012

Subject classification (UKÄ)

  • Natural Sciences
  • Physical Sciences


  • Photoelectron spectroscopy
  • Near-edge X-ray absorption fine structure
  • h-BN monolayer
  • Graphene
  • Oxidation


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