Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs

Axel R. Persson; Anders Gustafsson; Zhaoxia Bi; Lars Samuelson; Vanya Darakchieva; Per O.Å. Persson

doi:10.1063/5.0150863

Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs

Axel R. Persson, Anders Gustafsson, Zhaoxia Bi, Lars Samuelson, Vanya Darakchieva, Per O.Å. Persson

Research output: Contribution to journal › Article › peer-review

Abstract

Structural defects are detrimental to the efficiency and quality of optoelectronic semiconductor devices. In this work, we study InGaN platelets with a quantum well structure intended for nano-LEDs emitting red light and how their optical properties, measured with cathodoluminescence, relate to the corresponding atomic structure. Through a method of spectroscopy-thinning-imaging, we demonstrate in plan-view how stacking mismatch boundaries intersect the quantum well in a pattern correlated with the observed diminished cathodoluminescence intensity. The results highlight the importance of avoiding stacking mismatch in small LED structures due to the relatively large region of non-radiative recombination caused by the mismatch boundaries.

Original language	English
Article number	022103
Journal	Applied Physics Letters
Volume	123
Issue number	2
DOIs	https://doi.org/10.1063/5.0150863
Publication status	Published - 2023

Subject classification (UKÄ)

Condensed Matter Physics (including Material Physics, Nano Physics)

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10.1063/5.0150863

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title = "Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs",

abstract = "Structural defects are detrimental to the efficiency and quality of optoelectronic semiconductor devices. In this work, we study InGaN platelets with a quantum well structure intended for nano-LEDs emitting red light and how their optical properties, measured with cathodoluminescence, relate to the corresponding atomic structure. Through a method of spectroscopy-thinning-imaging, we demonstrate in plan-view how stacking mismatch boundaries intersect the quantum well in a pattern correlated with the observed diminished cathodoluminescence intensity. The results highlight the importance of avoiding stacking mismatch in small LED structures due to the relatively large region of non-radiative recombination caused by the mismatch boundaries. ",

author = "Persson, {Axel R.} and Anders Gustafsson and Zhaoxia Bi and Lars Samuelson and Vanya Darakchieva and Persson, {Per O.{\AA}.}",

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journal = "Applied Physics Letters",

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T1 - Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs

AU - Persson, Axel R.

AU - Gustafsson, Anders

AU - Bi, Zhaoxia

AU - Samuelson, Lars

AU - Darakchieva, Vanya

AU - Persson, Per O.Å.

PY - 2023

Y1 - 2023

N2 - Structural defects are detrimental to the efficiency and quality of optoelectronic semiconductor devices. In this work, we study InGaN platelets with a quantum well structure intended for nano-LEDs emitting red light and how their optical properties, measured with cathodoluminescence, relate to the corresponding atomic structure. Through a method of spectroscopy-thinning-imaging, we demonstrate in plan-view how stacking mismatch boundaries intersect the quantum well in a pattern correlated with the observed diminished cathodoluminescence intensity. The results highlight the importance of avoiding stacking mismatch in small LED structures due to the relatively large region of non-radiative recombination caused by the mismatch boundaries.

AB - Structural defects are detrimental to the efficiency and quality of optoelectronic semiconductor devices. In this work, we study InGaN platelets with a quantum well structure intended for nano-LEDs emitting red light and how their optical properties, measured with cathodoluminescence, relate to the corresponding atomic structure. Through a method of spectroscopy-thinning-imaging, we demonstrate in plan-view how stacking mismatch boundaries intersect the quantum well in a pattern correlated with the observed diminished cathodoluminescence intensity. The results highlight the importance of avoiding stacking mismatch in small LED structures due to the relatively large region of non-radiative recombination caused by the mismatch boundaries.

U2 - 10.1063/5.0150863

DO - 10.1063/5.0150863

M3 - Article

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VL - 123

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 022103

ER -

Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs

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