Abstract
Aluminium doped Si layers grown either by solid phase epitaxy (SPE) or molecular beam epitaxy (MBE) have been investigated over wide ranges of Al fluxes (J(Al) = 1 x 10(10)-3 x 10(13) cm-2s-1) and growth temperatures (T(s) = 500-900-degrees-C), using RHEED, LEED and AES during growth and cross section TEM of the as-deposited layers. For MBE growth, defect free films could be grown almost in the whole interval of J(Al) and T(s). In the SPE case Al is completely incorporated in the amorphous films. Upon crystallization dislocations and stacking faults/twins, as well as small voids are formed. For all concentrations and annealing temperatures TEM shows similar defect structures.
| Original language | English |
|---|---|
| Pages (from-to) | 235-240 |
| Number of pages | 6 |
| Journal | Institute of Physics Conference Series |
| Issue number | 100 |
| Publication status | Published - 1989 |
Subject classification (UKÄ)
- Condensed Matter Physics (including Material Physics, Nano Physics)
- Inorganic Chemistry