Defect-free InP nanowires grown in [001] direction on InP(001)

U Krishnamachari; Magnus Borgström; Jonas Ohlsson; Nikolay Panev; Lars Samuelson; Werner Seifert; Magnus Larsson; Reine Wallenberg

doi:10.1063/1.1784548

Defect-free InP nanowires grown in [001] direction on InP(001)

U Krishnamachari, Magnus Borgström, Jonas Ohlsson, Nikolay Panev, Lars Samuelson, Werner Seifert, Magnus Larsson, Reine Wallenberg

Research output: Contribution to journal › Article › peer-review

Abstract

We report on [001] InP nanowires grown by metalorganic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy reveals wires with nearly square cross sections and a perfect zinc-blende crystalline structure that is free of stacking faults. Photoluminescence measurements of single [001] nanowires exhibit a narrow and intense emission peak at approximately 1.4 eV, whereas <111>B grown reference wires show additional broad luminescence peaks at lower energy. The origin of this uncommon wire growth direction [001] is discussed as a means of controlled formation of [00l]-oriented nanowires on (001) substrates. (C) 2004 American Institute of Physics.

Original language	English
Pages (from-to)	2077-2079
Journal	Applied Physics Letters
Volume	85
Issue number	11
DOIs	https://doi.org/10.1063/1.1784548
Publication status	Published - 2004

Bibliographical note

The information about affiliations in this record was updated in December 2015.
The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)

Subject classification (UKÄ)

Chemical Sciences
Condensed Matter Physics (including Material Physics, Nano Physics)

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10.1063/1.1784548

National Center for High Resolution Electron Microscopy - ARTEMI Atomic Resolution TEM infrastructure of Sweden
Wallenberg, R. (Manager)
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Cite this

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title = "Defect-free InP nanowires grown in [001] direction on InP(001)",

abstract = "We report on [001] InP nanowires grown by metalorganic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy reveals wires with nearly square cross sections and a perfect zinc-blende crystalline structure that is free of stacking faults. Photoluminescence measurements of single [001] nanowires exhibit a narrow and intense emission peak at approximately 1.4 eV, whereas <111>B grown reference wires show additional broad luminescence peaks at lower energy. The origin of this uncommon wire growth direction [001] is discussed as a means of controlled formation of [00l]-oriented nanowires on (001) substrates. (C) 2004 American Institute of Physics.",

author = "U Krishnamachari and Magnus Borgstr{\"o}m and Jonas Ohlsson and Nikolay Panev and Lars Samuelson and Werner Seifert and Magnus Larsson and Reine Wallenberg",

note = "The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)",

year = "2004",

doi = "10.1063/1.1784548",

language = "English",

volume = "85",

pages = "2077--2079",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics (AIP)",

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TY - JOUR

T1 - Defect-free InP nanowires grown in [001] direction on InP(001)

AU - Krishnamachari, U

AU - Borgström, Magnus

AU - Ohlsson, Jonas

AU - Panev, Nikolay

AU - Samuelson, Lars

AU - Seifert, Werner

AU - Larsson, Magnus

AU - Wallenberg, Reine

N1 - The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)

PY - 2004

Y1 - 2004

N2 - We report on [001] InP nanowires grown by metalorganic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy reveals wires with nearly square cross sections and a perfect zinc-blende crystalline structure that is free of stacking faults. Photoluminescence measurements of single [001] nanowires exhibit a narrow and intense emission peak at approximately 1.4 eV, whereas <111>B grown reference wires show additional broad luminescence peaks at lower energy. The origin of this uncommon wire growth direction [001] is discussed as a means of controlled formation of [00l]-oriented nanowires on (001) substrates. (C) 2004 American Institute of Physics.

AB - We report on [001] InP nanowires grown by metalorganic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy reveals wires with nearly square cross sections and a perfect zinc-blende crystalline structure that is free of stacking faults. Photoluminescence measurements of single [001] nanowires exhibit a narrow and intense emission peak at approximately 1.4 eV, whereas <111>B grown reference wires show additional broad luminescence peaks at lower energy. The origin of this uncommon wire growth direction [001] is discussed as a means of controlled formation of [00l]-oriented nanowires on (001) substrates. (C) 2004 American Institute of Physics.

U2 - 10.1063/1.1784548

DO - 10.1063/1.1784548

M3 - Article

SN - 0003-6951

VL - 85

SP - 2077

EP - 2079

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Defect-free InP nanowires grown in [001] direction on InP(001)

Abstract

Bibliographical note

Subject classification (UKÄ)

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National Center for High Resolution Electron Microscopy - ARTEMI Atomic Resolution TEM infrastructure of Sweden

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