Defect Free PbTe Nanowires Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates

P. Dziawa; Janusz Sadowski; P. Dluzewski; E. Lusakowska; V. Domukhovski; B. Taliashvili; T. Wojciechowski; L. T. Baczewski; M. Bukala; M. Galicka; R. Buczko; P. Kacman; T. Story

doi:10.1021/cg900575r

Defect Free PbTe Nanowires Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates

P. Dziawa, Janusz Sadowski, P. Dluzewski, E. Lusakowska, V. Domukhovski, B. Taliashvili, T. Wojciechowski, L. T. Baczewski, M. Bukala, M. Galicka, R. Buczko, P. Kacman, T. Story

MAX IV Laboratory

Research output: Contribution to journal › Article › peer-review

Abstract

The molecular beam epitaxial growth of PbTe nanowires oil GaAs(111)B substrates is reported. The growth process was based oil the Au-catalyzed vapor-liquid-solid mechanism. These nanowires grow along the [100] axis; they are perpendicular to the substrate, have tapered shapes, and have diameters of about 90 rim at the base and 60 run at the top. High resolution transmission electron microscopy pictures reveal that the PbTe nanowires have a rock-salt structure and, in contrast to the one-dimensional structures of III-V and II-VI compound semiconductors such as GaAs. InAs, or ZnTe, are free from stacking faults. A theoretical analysis of these experimental findings, which is based oil ab initio modeling of the PbTe nanowires, is also presented.

Original language	English
Pages (from-to)	109-113
Journal	Crystal Growth & Design
Volume	10
Issue number	1
DOIs	https://doi.org/10.1021/cg900575r
Publication status	Published - 2010

Subject classification (UKÄ)

Physical Sciences
Natural Sciences

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10.1021/cg900575r

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@article{ce706ae59896440cbe1a4c1a61246b59,

title = "Defect Free PbTe Nanowires Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates",

abstract = "The molecular beam epitaxial growth of PbTe nanowires oil GaAs(111)B substrates is reported. The growth process was based oil the Au-catalyzed vapor-liquid-solid mechanism. These nanowires grow along the [100] axis; they are perpendicular to the substrate, have tapered shapes, and have diameters of about 90 rim at the base and 60 run at the top. High resolution transmission electron microscopy pictures reveal that the PbTe nanowires have a rock-salt structure and, in contrast to the one-dimensional structures of III-V and II-VI compound semiconductors such as GaAs. InAs, or ZnTe, are free from stacking faults. A theoretical analysis of these experimental findings, which is based oil ab initio modeling of the PbTe nanowires, is also presented.",

author = "P. Dziawa and Janusz Sadowski and P. Dluzewski and E. Lusakowska and V. Domukhovski and B. Taliashvili and T. Wojciechowski and Baczewski, {L. T.} and M. Bukala and M. Galicka and R. Buczko and P. Kacman and T. Story",

year = "2010",

doi = "10.1021/cg900575r",

language = "English",

volume = "10",

pages = "109--113",

journal = "Crystal Growth & Design",

issn = "1528-7483",

publisher = "The American Chemical Society (ACS)",

number = "1",

}

TY - JOUR

T1 - Defect Free PbTe Nanowires Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates

AU - Dziawa, P.

AU - Sadowski, Janusz

AU - Dluzewski, P.

AU - Lusakowska, E.

AU - Domukhovski, V.

AU - Taliashvili, B.

AU - Wojciechowski, T.

AU - Baczewski, L. T.

AU - Bukala, M.

AU - Galicka, M.

AU - Buczko, R.

AU - Kacman, P.

AU - Story, T.

PY - 2010

Y1 - 2010

N2 - The molecular beam epitaxial growth of PbTe nanowires oil GaAs(111)B substrates is reported. The growth process was based oil the Au-catalyzed vapor-liquid-solid mechanism. These nanowires grow along the [100] axis; they are perpendicular to the substrate, have tapered shapes, and have diameters of about 90 rim at the base and 60 run at the top. High resolution transmission electron microscopy pictures reveal that the PbTe nanowires have a rock-salt structure and, in contrast to the one-dimensional structures of III-V and II-VI compound semiconductors such as GaAs. InAs, or ZnTe, are free from stacking faults. A theoretical analysis of these experimental findings, which is based oil ab initio modeling of the PbTe nanowires, is also presented.

AB - The molecular beam epitaxial growth of PbTe nanowires oil GaAs(111)B substrates is reported. The growth process was based oil the Au-catalyzed vapor-liquid-solid mechanism. These nanowires grow along the [100] axis; they are perpendicular to the substrate, have tapered shapes, and have diameters of about 90 rim at the base and 60 run at the top. High resolution transmission electron microscopy pictures reveal that the PbTe nanowires have a rock-salt structure and, in contrast to the one-dimensional structures of III-V and II-VI compound semiconductors such as GaAs. InAs, or ZnTe, are free from stacking faults. A theoretical analysis of these experimental findings, which is based oil ab initio modeling of the PbTe nanowires, is also presented.

U2 - 10.1021/cg900575r

DO - 10.1021/cg900575r

M3 - Article

SN - 1528-7483

VL - 10

SP - 109

EP - 113

JO - Crystal Growth & Design

JF - Crystal Growth & Design

IS - 1

ER -

Defect Free PbTe Nanowires Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates

Abstract

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