Defect Structure of High-Temperature-Grown GaMnSb/GaSb

P. Romanowski, J. Bak-Misiuk, E. Dynowska, J. Z. Domagala, Janusz Sadowski, T. Wojciechowski, A. Barcz, R. Jakiela, W. Caliebe

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceedingpeer-review

8 Citations (SciVal)

Abstract

GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of Ga1-xMnxSb layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique.
Original languageEnglish
Title of host publicationActa Physica Polonica A
PublisherPolish Academy of Sciences
Pages341-343
Volume117
Publication statusPublished - 2010
Event8th National Meeting of the Synchrotron Radiation Users - Podlesice, Poland
Duration: 2009 Sep 242009 Sep 26

Publication series

Name
Number2
Volume117
ISSN (Print)0587-4246

Conference

Conference8th National Meeting of the Synchrotron Radiation Users
Country/TerritoryPoland
CityPodlesice
Period2009/09/242009/09/26

Subject classification (UKÄ)

  • Physical Sciences
  • Natural Sciences

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