Degenerate p-doping of InP nanowires for large area tunnel diodes

Jesper Wallentin; Peter Wickert; Martin Ek; Anders Gustafsson; Reine Wallenberg; Martin Magnusson; Lars Samuelson; Knut Deppert; Magnus Borgström

doi:10.1063/1.3669697

Degenerate p-doping of InP nanowires for large area tunnel diodes

Jesper Wallentin, Peter Wickert, Martin Ek, Anders Gustafsson, Reine Wallenberg, Martin Magnusson, Lars Samuelson, Knut Deppert, Magnus Borgström

Research output: Contribution to journal › Article › peer-review

Abstract

We have investigated p-doping of InP nanowires using diethyl zinc. Two-terminal devices showed non-linear source-drain characteristics and p-type gate dependence. Electron beam induced current measurements were employed to determine minority carrier diffusion lengths. We used large-area tunnel diodes to demonstrate degenerate doping, showing peak current densities of up to 0.11 A/cm(2) and room temperature peak to valley current ratios of 5.3. These results demonstrate that high p- and n-doping, paired with sharp doping profiles, can be achieved in InP nanowires. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3669697]

Original language	English
Article number	253105
Journal	Applied Physics Letters
Volume	99
Issue number	25
DOIs	https://doi.org/10.1063/1.3669697
Publication status	Published - 2011

Bibliographical note

The information about affiliations in this record was updated in December 2015.
The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)

Subject classification (UKÄ)

Chemical Sciences
Condensed Matter Physics (including Material Physics, Nano Physics)
Nano-technology

Access to Document

10.1063/1.3669697

1 Doctoral Thesis (compilation)

Doping of Semiconductor Nanowires
Wallentin, J., 2012, Lund University. 183 p.
Research output: Thesis › Doctoral Thesis (compilation)

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National Center for High Resolution Electron Microscopy - ARTEMI Atomic Resolution TEM infrastructure of Sweden
Wallenberg, R. (Manager)
Centre for Analysis and Synthesis
Infrastructure

Cite this

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title = "Degenerate p-doping of InP nanowires for large area tunnel diodes",

abstract = "We have investigated p-doping of InP nanowires using diethyl zinc. Two-terminal devices showed non-linear source-drain characteristics and p-type gate dependence. Electron beam induced current measurements were employed to determine minority carrier diffusion lengths. We used large-area tunnel diodes to demonstrate degenerate doping, showing peak current densities of up to 0.11 A/cm(2) and room temperature peak to valley current ratios of 5.3. These results demonstrate that high p- and n-doping, paired with sharp doping profiles, can be achieved in InP nanowires. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3669697]",

author = "Jesper Wallentin and Peter Wickert and Martin Ek and Anders Gustafsson and Reine Wallenberg and Martin Magnusson and Lars Samuelson and Knut Deppert and Magnus Borgstr{\"o}m",

note = "The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)",

year = "2011",

doi = "10.1063/1.3669697",

language = "English",

volume = "99",

journal = "Applied Physics Letters",

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T1 - Degenerate p-doping of InP nanowires for large area tunnel diodes

AU - Wallentin, Jesper

AU - Wickert, Peter

AU - Ek, Martin

AU - Gustafsson, Anders

AU - Wallenberg, Reine

AU - Magnusson, Martin

AU - Samuelson, Lars

AU - Deppert, Knut

AU - Borgström, Magnus

N1 - The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)

PY - 2011

Y1 - 2011

N2 - We have investigated p-doping of InP nanowires using diethyl zinc. Two-terminal devices showed non-linear source-drain characteristics and p-type gate dependence. Electron beam induced current measurements were employed to determine minority carrier diffusion lengths. We used large-area tunnel diodes to demonstrate degenerate doping, showing peak current densities of up to 0.11 A/cm(2) and room temperature peak to valley current ratios of 5.3. These results demonstrate that high p- and n-doping, paired with sharp doping profiles, can be achieved in InP nanowires. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3669697]

AB - We have investigated p-doping of InP nanowires using diethyl zinc. Two-terminal devices showed non-linear source-drain characteristics and p-type gate dependence. Electron beam induced current measurements were employed to determine minority carrier diffusion lengths. We used large-area tunnel diodes to demonstrate degenerate doping, showing peak current densities of up to 0.11 A/cm(2) and room temperature peak to valley current ratios of 5.3. These results demonstrate that high p- and n-doping, paired with sharp doping profiles, can be achieved in InP nanowires. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3669697]

U2 - 10.1063/1.3669697

DO - 10.1063/1.3669697

M3 - Article

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 253105

ER -

Degenerate p-doping of InP nanowires for large area tunnel diodes

Abstract

Bibliographical note

Subject classification (UKÄ)

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Fingerprint

Research output

Doping of Semiconductor Nanowires

Equipment

National Center for High Resolution Electron Microscopy - ARTEMI Atomic Resolution TEM infrastructure of Sweden

Cite this