Abstract
We show that isolated magnetic dipoles centred at the position of manganese impurities in a gallium arsenide lattice lead to spin polarized states in the bandgap of the III-V semiconductor. Spectroscopy simulations with a tungsten tip agree well with experimental data; in this case, no difference can be observed for the two magnetic groundstates. But if the signal is read with a magnetic iron tip, it changes by a factor of up to 20, depending on the magnetic orientation of the Mn atom.
Original language | English |
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Journal | Nanotechnology |
Volume | 18 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2007 |
Subject classification (UKÄ)
- Nano-technology