Development of a Vertical Wrap-Gated InAs FET

In this paper, we report on the development of a vertical wrap-gated field-effect transistor based on epitaxially grown InAs nanowires. We discuss some of the important steps involved in the growth and processing, such as nanowire position control in situ doping, high-kappa dielectric deposition, spacer layer formation: and metal wrap-gate fabrication. In particular, we compare a few alternative methods for deposition of materials onto vertical structures and discuss their potential advantages and limitations. Finally, we also present a comparison of transistor performance for nanowires grown using two different epitaxial techniques.