Development of the Lattice Matched GaInP/GaInAs/Ge Triple Junction Solar Cell with an Efficiency Over 40%

L. Barrutia, I. García, E. Barrigón, M. Ochoa, I. Lombardero, M. Hinojosa, P. Caño, J. Bautista, L. Cifuentes, I. Rey-Stolle, C. Algora

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceedingpeer-review

7 Citations (SciVal)

Abstract

This paper summarizes the state-of-the-art of the lattice matched GaInP/Ga(In)As/Ge triple-junction solar cell developed at the Solar Energy Institute of UPM (IES-UPM). Different research topics tackled over the last years about this structure are described. As result of this work, an efficiency of ∼ 40% at ∼ 415 × is presented.

Original languageEnglish
Title of host publicationProceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018
EditorsJavier Mateos, Tomas Gonzalez
PublisherIEEE - Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)978-1-5386-5779-9
DOIs
Publication statusPublished - 2018
Event12th Spanish Conference on Electron Devices, CDE 2018 - Salamanca, Spain
Duration: 2018 Nov 142018 Nov 16

Conference

Conference12th Spanish Conference on Electron Devices, CDE 2018
Country/TerritorySpain
CitySalamanca
Period2018/11/142018/11/16

Subject classification (UKÄ)

  • Energy Systems

Keywords

  • Ge wafers
  • III-V semiconductors
  • MOVPE
  • multijunction solar cell

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