Diameter-dependent growth rate of InAs nanowires

Linus Fröberg, Werner Seifert, Jonas Johansson

Research output: Contribution to journalArticlepeer-review

Abstract

We have grown Au seeded InAs nanowires using chemical beam epitaxy and report on the growth rate
dependence on nanowire diameter. We find a maximum of the growth rate at a nanowire diameter of 25 nm,
below which the growth rate decreases due to the Gibbs-Thomson effect. Above the maximum, the growth rate
decreases with increasing diameter due to the effect of material diffusion to the growth point. A unified model,
which accounts for both the Gibbs-Thomson effect and material diffusion, is presented and successfully
compared to the experiments. From the comparison, we extract the diffusion length on the substrate surface
and a critical diameter, below which nanowire growth ceases, and show that these physical parameters can be
tuned by controlling the supersaturation.
Original languageEnglish
Article number153401
JournalPhysical Review B. Condensed Matter and Materials Physics
Volume76
DOIs
Publication statusPublished - 2007

Subject classification (UKÄ)

  • Condensed Matter Physics

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