Abstract
We have grown Au seeded InAs nanowires using chemical beam epitaxy and report on the growth rate
dependence on nanowire diameter. We find a maximum of the growth rate at a nanowire diameter of 25 nm,
below which the growth rate decreases due to the Gibbs-Thomson effect. Above the maximum, the growth rate
decreases with increasing diameter due to the effect of material diffusion to the growth point. A unified model,
which accounts for both the Gibbs-Thomson effect and material diffusion, is presented and successfully
compared to the experiments. From the comparison, we extract the diffusion length on the substrate surface
and a critical diameter, below which nanowire growth ceases, and show that these physical parameters can be
tuned by controlling the supersaturation.
dependence on nanowire diameter. We find a maximum of the growth rate at a nanowire diameter of 25 nm,
below which the growth rate decreases due to the Gibbs-Thomson effect. Above the maximum, the growth rate
decreases with increasing diameter due to the effect of material diffusion to the growth point. A unified model,
which accounts for both the Gibbs-Thomson effect and material diffusion, is presented and successfully
compared to the experiments. From the comparison, we extract the diffusion length on the substrate surface
and a critical diameter, below which nanowire growth ceases, and show that these physical parameters can be
tuned by controlling the supersaturation.
Original language | English |
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Article number | 153401 |
Journal | Physical Review B. Condensed Matter and Materials Physics |
Volume | 76 |
DOIs | |
Publication status | Published - 2007 |
Subject classification (UKÄ)
- Condensed Matter Physics