Diffusion-driven current transport to near-surface nanostructures

Pyry Kivisaari; Lauri Riuttanen; Sami Suihkonen; Jani Oksanen

doi:10.1109/NUSOD.2015.7292850

Diffusion-driven current transport to near-surface nanostructures

Pyry Kivisaari, Lauri Riuttanen, Sami Suihkonen, Jani Oksanen

Solid State Physics

Aalto University

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

Abstract

Diffusion-driven current transport (DDCT) has recently been proposed as a new way to organize the current injection in nanoscale optoelectronic devices. The very recent first proof-of-principle experiments have also shown that DDCT works as predicted theoretically. In this work we perform simulations on DDCT-based III-Nitride devices and demonstrate how the optimization of DDCT differs significantly from the optimization of conventional double heterostructure based devices.

Original language	English
Title of host publication	15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015
Publisher	IEEE Computer Society
Pages	117-118
Number of pages	2
ISBN (Electronic)	9781479983797
DOIs	https://doi.org/10.1109/NUSOD.2015.7292850
Publication status	Published - 2015 May 10
Event	15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015 - Taipei, Taiwan Duration: 2015 Sept 7 → 2015 Sept 11

Conference

Conference	15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015
Country/Territory	Taiwan
City	Taipei
Period	2015/09/07 → 2015/09/11

Subject classification (UKÄ)

Nano-technology

Free keywords

Charge carrier processes
Doping
Electric potential
Gallium nitride
Nanostructures
Optimization
Semiconductor process modeling

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10.1109/NUSOD.2015.7292850

Cite this

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title = "Diffusion-driven current transport to near-surface nanostructures",

abstract = "Diffusion-driven current transport (DDCT) has recently been proposed as a new way to organize the current injection in nanoscale optoelectronic devices. The very recent first proof-of-principle experiments have also shown that DDCT works as predicted theoretically. In this work we perform simulations on DDCT-based III-Nitride devices and demonstrate how the optimization of DDCT differs significantly from the optimization of conventional double heterostructure based devices.",

keywords = "Charge carrier processes, Doping, Electric potential, Gallium nitride, Nanostructures, Optimization, Semiconductor process modeling",

author = "Pyry Kivisaari and Lauri Riuttanen and Sami Suihkonen and Jani Oksanen",

year = "2015",

month = may,

day = "10",

doi = "10.1109/NUSOD.2015.7292850",

language = "English",

pages = "117--118",

booktitle = "15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015",

publisher = "IEEE Computer Society",

address = "United States",

note = "15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015 ; Conference date: 07-09-2015 Through 11-09-2015",

}

Kivisaari, P, Riuttanen, L, Suihkonen, S & Oksanen, J 2015, Diffusion-driven current transport to near-surface nanostructures. in 15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015., 7292850, IEEE Computer Society, pp. 117-118, 15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015, Taipei, Taiwan, 2015/09/07. https://doi.org/10.1109/NUSOD.2015.7292850

Diffusion-driven current transport to near-surface nanostructures. / Kivisaari, Pyry; Riuttanen, Lauri; Suihkonen, Sami et al.
15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015. IEEE Computer Society, 2015. p. 117-118 7292850.

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

TY - GEN

T1 - Diffusion-driven current transport to near-surface nanostructures

AU - Kivisaari, Pyry

AU - Riuttanen, Lauri

AU - Suihkonen, Sami

AU - Oksanen, Jani

PY - 2015/5/10

Y1 - 2015/5/10

N2 - Diffusion-driven current transport (DDCT) has recently been proposed as a new way to organize the current injection in nanoscale optoelectronic devices. The very recent first proof-of-principle experiments have also shown that DDCT works as predicted theoretically. In this work we perform simulations on DDCT-based III-Nitride devices and demonstrate how the optimization of DDCT differs significantly from the optimization of conventional double heterostructure based devices.

AB - Diffusion-driven current transport (DDCT) has recently been proposed as a new way to organize the current injection in nanoscale optoelectronic devices. The very recent first proof-of-principle experiments have also shown that DDCT works as predicted theoretically. In this work we perform simulations on DDCT-based III-Nitride devices and demonstrate how the optimization of DDCT differs significantly from the optimization of conventional double heterostructure based devices.

KW - Charge carrier processes

KW - Doping

KW - Electric potential

KW - Gallium nitride

KW - Nanostructures

KW - Optimization

KW - Semiconductor process modeling

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U2 - 10.1109/NUSOD.2015.7292850

DO - 10.1109/NUSOD.2015.7292850

M3 - Paper in conference proceeding

AN - SCOPUS:84959189149

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EP - 118

BT - 15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015

PB - IEEE Computer Society

T2 - 15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015

Y2 - 7 September 2015 through 11 September 2015

ER -

Diffusion-driven current transport to near-surface nanostructures

Abstract

Conference

Subject classification (UKÄ)

Free keywords

Access to Document

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