Direct Imaging of Atomic Scale Structure and Electronic Properties of GaAs Wurtzite and Zinc Blende Nanowire Surfaces.

Martin Hjort; Sebastian Lehmann; Johan Knutsson; Rainer Timm; Daniel Jacobsson; Edvin Lundgren; Kimberly Dick Thelander; Anders Mikkelsen

doi:10.1021/nl402424x

Direct Imaging of Atomic Scale Structure and Electronic Properties of GaAs Wurtzite and Zinc Blende Nanowire Surfaces.

Martin Hjort, Sebastian Lehmann, Johan Knutsson, Rainer Timm, Daniel Jacobsson, Edvin Lundgren, Kimberly Dick Thelander, Anders Mikkelsen

Research output: Contribution to journal › Article › peer-review

Abstract

Using scanning tunneling microscopy and spectroscopy we study the atomic scale geometry and electronic structure of GaAs nanowires exhibiting controlled axial stacking of wurtzite (Wz) and zinc blende (Zb) crystal segments. We find that the nonpolar low-index surfaces {110}, {101̅0}, and {112̅0} are unreconstructed, unpinned, and without states in the band gap region. Direct comparison between Wz and Zb GaAs reveal a type-II band alignment and a Wz GaAs band gap of 1.52 eV.

Original language	English
Pages (from-to)	4492-4498
Journal	Nano Letters
Volume	13
Issue number	9
DOIs	https://doi.org/10.1021/nl402424x
Publication status	Published - 2013

Bibliographical note

The information about affiliations in this record was updated in December 2015.
The record was previously connected to the following departments: Synchrotron Radiation Research (011013009), Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)

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Nano Technology

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10.1021/nl402424x

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title = "Direct Imaging of Atomic Scale Structure and Electronic Properties of GaAs Wurtzite and Zinc Blende Nanowire Surfaces.",

abstract = "Using scanning tunneling microscopy and spectroscopy we study the atomic scale geometry and electronic structure of GaAs nanowires exhibiting controlled axial stacking of wurtzite (Wz) and zinc blende (Zb) crystal segments. We find that the nonpolar low-index surfaces {110}, {101̅0}, and {112̅0} are unreconstructed, unpinned, and without states in the band gap region. Direct comparison between Wz and Zb GaAs reveal a type-II band alignment and a Wz GaAs band gap of 1.52 eV.",

author = "Martin Hjort and Sebastian Lehmann and Johan Knutsson and Rainer Timm and Daniel Jacobsson and Edvin Lundgren and {Dick Thelander}, Kimberly and Anders Mikkelsen",

note = "The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Synchrotron Radiation Research (011013009), Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)",

year = "2013",

doi = "10.1021/nl402424x",

language = "English",

volume = "13",

pages = "4492--4498",

journal = "Nano Letters",

issn = "1530-6992",

publisher = "The American Chemical Society (ACS)",

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TY - JOUR

T1 - Direct Imaging of Atomic Scale Structure and Electronic Properties of GaAs Wurtzite and Zinc Blende Nanowire Surfaces.

AU - Hjort, Martin

AU - Lehmann, Sebastian

AU - Knutsson, Johan

AU - Timm, Rainer

AU - Jacobsson, Daniel

AU - Lundgren, Edvin

AU - Dick Thelander, Kimberly

AU - Mikkelsen, Anders

N1 - The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Synchrotron Radiation Research (011013009), Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)

PY - 2013

Y1 - 2013

N2 - Using scanning tunneling microscopy and spectroscopy we study the atomic scale geometry and electronic structure of GaAs nanowires exhibiting controlled axial stacking of wurtzite (Wz) and zinc blende (Zb) crystal segments. We find that the nonpolar low-index surfaces {110}, {101̅0}, and {112̅0} are unreconstructed, unpinned, and without states in the band gap region. Direct comparison between Wz and Zb GaAs reveal a type-II band alignment and a Wz GaAs band gap of 1.52 eV.

AB - Using scanning tunneling microscopy and spectroscopy we study the atomic scale geometry and electronic structure of GaAs nanowires exhibiting controlled axial stacking of wurtzite (Wz) and zinc blende (Zb) crystal segments. We find that the nonpolar low-index surfaces {110}, {101̅0}, and {112̅0} are unreconstructed, unpinned, and without states in the band gap region. Direct comparison between Wz and Zb GaAs reveal a type-II band alignment and a Wz GaAs band gap of 1.52 eV.

U2 - 10.1021/nl402424x

DO - 10.1021/nl402424x

M3 - Article

C2 - 23941328

SN - 1530-6992

VL - 13

SP - 4492

EP - 4498

JO - Nano Letters

JF - Nano Letters

IS - 9

ER -

Direct Imaging of Atomic Scale Structure and Electronic Properties of GaAs Wurtzite and Zinc Blende Nanowire Surfaces.

Abstract

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