Abstract
We describe the production of hierarchical branched nanowire structures by the sequential seeding of multiple wire generations with metal nanoparticles. Such complex structures represent the next step in the study of functional nanowires, as they increase the potential functionality of nanostructures produced in a self-assembled way. It is possible, for example, to fabricate a variety of active heterostructure segments with different compositions and diameters within a single connected structure. The focus of this work is on epitaxial III-V semiconductor branched nanowire structures, with the two materials GaP and InAs used as typical examples of branched structures with cubic (zinc blende) and hexagonal (wurtzite) crystal structures. The general morphology of these structures will be described, as well as the relationship between morphology and crystal structure.
| Original language | English |
|---|---|
| Pages (from-to) | 127-133 |
| Journal | MRS Bulletin |
| Volume | 32 |
| Issue number | 2 |
| Publication status | Published - 2007 |
Bibliographical note
The information about affiliations in this record was updated in December 2015.The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
Subject classification (UKÄ)
- Condensed Matter Physics (including Material Physics, Nano Physics)
- Chemical Sciences
Free keywords
- Nanotechnology
- semiconductors
- crystal structure
- Nanowires
- electron microscopy