Disentangling phonon and impurity interactions in delta-doped Si(001)

Federico Mazzola, Craig Polley, Jill A. Miwa, Michelle Y. Simmons, Justin W. Wells

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9 Citations (SciVal)

Abstract

We present a study of the phonon and impurity interactions in a shallow two dimensional electron gas formed in Si(001). A highly conductive ultra-narrow n-type dopant delta-layer, which serves as a platform for quantum computation architecture, is formed and studied by angle resolved photoemission spectroscopy (ARPES) and temperature dependent nanoscale 4-point probe (4PP). The bandstructure of the delta-layer state is both measured and simulated. At 100 K, good agreement is only achieved by including interactions; electron-impurity scattering (W-0 = 56 to 61 meV); and electron-phonon coupling (lambda = 0.14 +/- 0.04). These results are shown to be consistent with temperature dependent 4PP resistance measurements which indicate that at 100 K, approximate to 7/8 of the measured resistance is due to impurity scattering with the remaining 1/8 coming from phonon interactions. In both resistance and bandstructure measurements, the impurity contribution exhibits a variability of approximate to 9% for nominally identical samples. The combination of ARPES and 4PP affords a thorough insight into the relevant contributions to electrical resistance in reduced dimensionality electronic platforms. (C) 2014 AIP Publishing LLC.
Original languageEnglish
Article number173108
JournalApplied Physics Letters
Volume104
Issue number17
DOIs
Publication statusPublished - 2014

Subject classification (UKÄ)

  • Physical Sciences
  • Natural Sciences

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