Abstract
We study by X-ray nanodiffraction the statistical distribution of the two possible twinned zinc-blende (ZB) orientations as well as the occurrence of the wurtzite structure within single GaAs nanowires (NWs) grown by molecular beam epitaxy on Si(111). A fast scanning scheme allowed to perform diffraction experiments on 160 individual NWs. We find that although on average the two ZB orientations show a similar abundance, in 90% of all NWs one ZB orientation dominates and little twinning is observed within each individual NW.
Original language | English |
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Pages (from-to) | 860-863 |
Number of pages | 4 |
Journal | Physica Status Solidi - Rapid Research Letters |
Volume | 7 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2013 Oct |
Externally published | Yes |
Free keywords
- Crystal structure
- GaAs
- Nanowires
- X-ray diffraction