Doping of GaAsP nanowires grown by aerotaxy

Sudhakar Sivakumar; Irene Geijselaers; Axel Persson; Reine Wallenberg; Knut Deppert; Lars Samuelson; Martin H. Magnusson

Abstract

Nanowire (NW) Photovoltaics are a promising route for low-cost multi-bandgap tandem cells, which is taxing in terms of processing and lattice matching in traditional planar geometries.[1] III-V nanowires are more suitable for monolithic integration as they can assimilate the lattice mismatch to a larger extent.[2] GaAsP is a material that offers a wide tunability of the band gap from near infrared (Eg = 1.42 eV) to visible regions (Eg = 2.3 eV) and is one of the best-suited materials for growth on silicon.[3]
Controlled synthesis of GaAs(1-x)P(x) NWs with a bandgap ranging from 1.42 to 1.90 eV (at 300K) through the scalable Aerotaxy [4] technique has already been reported.[5]
The present work concerns doping of GaAsP NWs by controlling precursor (DEZn) flows during growth by Aerotaxy. Here we present structural, optical and electrical studies of doped GaAs(1-x)P(x) NWs by high-resolution TEM, Photoluminescence, 4-point probe and Hall measurements.

Original language	English
Publication status	Published - 2019 Jul 1
Event	21th International Vacuum Congress: IVC-21 - Malmö, Sweden Duration: 2019 Jul 1 → 2019 Jul 5 https://mkon.nu/IVC21

Conference

Conference	21th International Vacuum Congress
Abbreviated title	IVC-21
Country/Territory	Sweden
City	Malmö
Period	2019/07/01 → 2019/07/05
Internet address	https://mkon.nu/IVC21

Subject classification (UKÄ)

Nano-technology
Condensed Matter Physics (including Material Physics, Nano Physics)

Lund Nano Lab - part of national infrastructure Myfab
Hankin, L. (Manager)
NanoLund: Centre for Nanoscience
Infrastructure

Cite this

@conference{097bc01fe0d24cbdb1d5883cd023bb6d,

title = "Doping of GaAsP nanowires grown by aerotaxy",

abstract = "Nanowire (NW) Photovoltaics are a promising route for low-cost multi-bandgap tandem cells, which is taxing in terms of processing and lattice matching in traditional planar geometries.[1] III-V nanowires are more suitable for monolithic integration as they can assimilate the lattice mismatch to a larger extent.[2] GaAsP is a material that offers a wide tunability of the band gap from near infrared (Eg = 1.42 eV) to visible regions (Eg = 2.3 eV) and is one of the best-suited materials for growth on silicon.[3]Controlled synthesis of GaAs(1-x)P(x) NWs with a bandgap ranging from 1.42 to 1.90 eV (at 300K) through the scalable Aerotaxy [4] technique has already been reported.[5]The present work concerns doping of GaAsP NWs by controlling precursor (DEZn) flows during growth by Aerotaxy. Here we present structural, optical and electrical studies of doped GaAs(1-x)P(x) NWs by high-resolution TEM, Photoluminescence, 4-point probe and Hall measurements.",

author = "Sudhakar Sivakumar and Irene Geijselaers and Axel Persson and Reine Wallenberg and Knut Deppert and Lars Samuelson and Magnusson, {Martin H.}",

year = "2019",

month = jul,

day = "1",

language = "English",

note = "21th International Vacuum Congress ; Conference date: 01-07-2019 Through 05-07-2019",

url = "https://mkon.nu/IVC21",

}

TY - CONF

T1 - Doping of GaAsP nanowires grown by aerotaxy

AU - Sivakumar, Sudhakar

AU - Geijselaers, Irene

AU - Persson, Axel

AU - Wallenberg, Reine

AU - Deppert, Knut

AU - Samuelson, Lars

AU - Magnusson, Martin H.

PY - 2019/7/1

Y1 - 2019/7/1

N2 - Nanowire (NW) Photovoltaics are a promising route for low-cost multi-bandgap tandem cells, which is taxing in terms of processing and lattice matching in traditional planar geometries.[1] III-V nanowires are more suitable for monolithic integration as they can assimilate the lattice mismatch to a larger extent.[2] GaAsP is a material that offers a wide tunability of the band gap from near infrared (Eg = 1.42 eV) to visible regions (Eg = 2.3 eV) and is one of the best-suited materials for growth on silicon.[3]Controlled synthesis of GaAs(1-x)P(x) NWs with a bandgap ranging from 1.42 to 1.90 eV (at 300K) through the scalable Aerotaxy [4] technique has already been reported.[5]The present work concerns doping of GaAsP NWs by controlling precursor (DEZn) flows during growth by Aerotaxy. Here we present structural, optical and electrical studies of doped GaAs(1-x)P(x) NWs by high-resolution TEM, Photoluminescence, 4-point probe and Hall measurements.

AB - Nanowire (NW) Photovoltaics are a promising route for low-cost multi-bandgap tandem cells, which is taxing in terms of processing and lattice matching in traditional planar geometries.[1] III-V nanowires are more suitable for monolithic integration as they can assimilate the lattice mismatch to a larger extent.[2] GaAsP is a material that offers a wide tunability of the band gap from near infrared (Eg = 1.42 eV) to visible regions (Eg = 2.3 eV) and is one of the best-suited materials for growth on silicon.[3]Controlled synthesis of GaAs(1-x)P(x) NWs with a bandgap ranging from 1.42 to 1.90 eV (at 300K) through the scalable Aerotaxy [4] technique has already been reported.[5]The present work concerns doping of GaAsP NWs by controlling precursor (DEZn) flows during growth by Aerotaxy. Here we present structural, optical and electrical studies of doped GaAs(1-x)P(x) NWs by high-resolution TEM, Photoluminescence, 4-point probe and Hall measurements.

M3 - Abstract

T2 - 21th International Vacuum Congress

Y2 - 1 July 2019 through 5 July 2019

ER -

Doping of GaAsP nanowires grown by aerotaxy

Abstract

Conference

Subject classification (UKÄ)

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Equipment

Lund Nano Lab - part of national infrastructure Myfab

Cite this