Drive current and threshold voltage control in vertical InAs wrap-gate transistors

Carl Rehnstedt, Claes Thelander, Linus Fröberg, B J Ohlsson, Lars Samuelson, Lars-Erik Wernersson

Research output: Contribution to journalArticlepeer-review

Abstract

Results on fabrication and DC-characterisation of vertical InAs nanowire wrap-gate field-effect transistor arrays with a gate length of 50 nm are presented. Each nanowire array was processed into a transistor with a systematic variation in a number of wires and wire diameter over the sample. Extensive studies have been performed on the influence of wire number and diameter on the transistor characteristics due to a high device yield (84%). In particular it is shown that the threshold voltage depends on the wire diameter, with a change in the order of 5 mV/nm. These results show the possibility of changing the transistor characteristics on the sample by altering the wire dimensions, still using only one patterning and growth sequence.
Original languageEnglish
Pages (from-to)236-237
JournalElectronics Letters
Volume44
Issue number3
DOIs
Publication statusPublished - 2008

Subject classification (UKÄ)

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'Drive current and threshold voltage control in vertical InAs wrap-gate transistors'. Together they form a unique fingerprint.

Cite this