Abstract
Results on fabrication and DC-characterisation of vertical InAs nanowire wrap-gate field-effect transistor arrays with a gate length of 50 nm are presented. Each nanowire array was processed into a transistor with a systematic variation in a number of wires and wire diameter over the sample. Extensive studies have been performed on the influence of wire number and diameter on the transistor characteristics due to a high device yield (84%). In particular it is shown that the threshold voltage depends on the wire diameter, with a change in the order of 5 mV/nm. These results show the possibility of changing the transistor characteristics on the sample by altering the wire dimensions, still using only one patterning and growth sequence.
Original language | English |
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Pages (from-to) | 236-237 |
Journal | Electronics Letters |
Volume | 44 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2008 |
Subject classification (UKÄ)
- Electrical Engineering, Electronic Engineering, Information Engineering
- Condensed Matter Physics