Drive current and threshold voltage control in vertical InAs wrap-gate transistors

Results on fabrication and DC-characterisation of vertical InAs nanowire wrap-gate field-effect transistor arrays with a gate length of 50 nm are presented. Each nanowire array was processed into a transistor with a systematic variation in a number of wires and wire diameter over the sample. Extensive studies have been performed on the influence of wire number and diameter on the transistor characteristics due to a high device yield (84%). In particular it is shown that the threshold voltage depends on the wire diameter, with a change in the order of 5 mV/nm. These results show the possibility of changing the transistor characteristics on the sample by altering the wire dimensions, still using only one patterning and growth sequence.