Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin Films

Hannes Dahlberg; Lars-Erik Wernersson

doi:10.1109/ESSDERC59256.2023.10268561

Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin Films

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

Abstract

The polarization switching dynamics for Hf 1-x Zr x O 2 (HZO) integrated on InAs is studied as a function of pulse width and amplitude. Due to a mixed ferroelectric/antiferroelectric phase at x=0.8, a more gradual total polarization update is shown compared to a fully ferroelectric Hf 0.5 Zr 0.5 O 2 stack. A lowered operating voltage is achieved in Hf 0.2 Zr 0.8 O 2 by activating an inner ferroelectric hysteresis loop, and the switching dynamics of this inner hysteresis is studied. The Nucleation-Limited Switching (NLS) model is used to determine switching times for both stacks and show increased switching speeds for low-voltage polarization in the Hf 0.2 Zr 0.8 O 2 inner hysteresis, suggesting a benefit of using high-Zr HZO for higher speed and lower operating voltages.

Original language	English
Title of host publication	ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)
Publisher	IEEE - Institute of Electrical and Electronics Engineers Inc.
Pages	33-36
Number of pages	4
ISBN (Electronic)	979-835030423-7
DOIs	https://doi.org/10.1109/ESSDERC59256.2023.10268561
Publication status	Published - 2023 Oct 2
Event	IEEE 53rd European Solid-State Device Research Conference (ESSDERC) - Lisbon, Portugal Duration: 2023 Sept 11 → 2023 Sept 14

Conference

Conference	IEEE 53rd European Solid-State Device Research Conference (ESSDERC)
Country/Territory	Portugal
City	Lisbon
Period	2023/09/11 → 2023/09/14

Subject classification (UKÄ)

Other Electrical Engineering, Electronic Engineering, Information Engineering

Free keywords

FERROELECTRICITY
HZO
Antiferroelectricity
Polarization
Switching dynamics
Indium Arsenide

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10.1109/ESSDERC59256.2023.10268561

Cite this

@inproceedings{95473b769a764b05896f8ad4ccabc047,

title = "Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin Films",

abstract = "The polarization switching dynamics for Hf 1-x Zr x O 2 (HZO) integrated on InAs is studied as a function of pulse width and amplitude. Due to a mixed ferroelectric/antiferroelectric phase at x=0.8, a more gradual total polarization update is shown compared to a fully ferroelectric Hf 0.5 Zr 0.5 O 2 stack. A lowered operating voltage is achieved in Hf 0.2 Zr 0.8 O 2 by activating an inner ferroelectric hysteresis loop, and the switching dynamics of this inner hysteresis is studied. The Nucleation-Limited Switching (NLS) model is used to determine switching times for both stacks and show increased switching speeds for low-voltage polarization in the Hf 0.2 Zr 0.8 O 2 inner hysteresis, suggesting a benefit of using high-Zr HZO for higher speed and lower operating voltages.",

keywords = "FERROELECTRICITY, HZO, Antiferroelectricity, Polarization, Switching dynamics, Indium Arsenide",

author = "Hannes Dahlberg and Lars-Erik Wernersson",

year = "2023",

month = oct,

day = "2",

doi = "10.1109/ESSDERC59256.2023.10268561",

language = "English",

pages = "33--36",

booktitle = "ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "IEEE 53rd European Solid-State Device Research Conference (ESSDERC) ; Conference date: 11-09-2023 Through 14-09-2023",

}

Dahlberg, H & Wernersson, L-E 2023, Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin Films. in ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC). IEEE - Institute of Electrical and Electronics Engineers Inc., pp. 33-36, IEEE 53rd European Solid-State Device Research Conference (ESSDERC), Lisbon, Portugal, 2023/09/11. https://doi.org/10.1109/ESSDERC59256.2023.10268561

Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin Films. / Dahlberg, Hannes ; Wernersson, Lars-Erik.
ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC). IEEE - Institute of Electrical and Electronics Engineers Inc., 2023. p. 33-36.

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

TY - GEN

T1 - Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin Films

AU - Dahlberg, Hannes

AU - Wernersson, Lars-Erik

PY - 2023/10/2

Y1 - 2023/10/2

N2 - The polarization switching dynamics for Hf 1-x Zr x O 2 (HZO) integrated on InAs is studied as a function of pulse width and amplitude. Due to a mixed ferroelectric/antiferroelectric phase at x=0.8, a more gradual total polarization update is shown compared to a fully ferroelectric Hf 0.5 Zr 0.5 O 2 stack. A lowered operating voltage is achieved in Hf 0.2 Zr 0.8 O 2 by activating an inner ferroelectric hysteresis loop, and the switching dynamics of this inner hysteresis is studied. The Nucleation-Limited Switching (NLS) model is used to determine switching times for both stacks and show increased switching speeds for low-voltage polarization in the Hf 0.2 Zr 0.8 O 2 inner hysteresis, suggesting a benefit of using high-Zr HZO for higher speed and lower operating voltages.

AB - The polarization switching dynamics for Hf 1-x Zr x O 2 (HZO) integrated on InAs is studied as a function of pulse width and amplitude. Due to a mixed ferroelectric/antiferroelectric phase at x=0.8, a more gradual total polarization update is shown compared to a fully ferroelectric Hf 0.5 Zr 0.5 O 2 stack. A lowered operating voltage is achieved in Hf 0.2 Zr 0.8 O 2 by activating an inner ferroelectric hysteresis loop, and the switching dynamics of this inner hysteresis is studied. The Nucleation-Limited Switching (NLS) model is used to determine switching times for both stacks and show increased switching speeds for low-voltage polarization in the Hf 0.2 Zr 0.8 O 2 inner hysteresis, suggesting a benefit of using high-Zr HZO for higher speed and lower operating voltages.

KW - FERROELECTRICITY

KW - HZO

KW - Antiferroelectricity

KW - Polarization

KW - Switching dynamics

KW - Indium Arsenide

U2 - 10.1109/ESSDERC59256.2023.10268561

DO - 10.1109/ESSDERC59256.2023.10268561

M3 - Paper in conference proceeding

SP - 33

EP - 36

BT - ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)

PB - IEEE - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)

Y2 - 11 September 2023 through 14 September 2023

ER -

Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin Films

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Free keywords

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