Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films

BS Sorensen, PE Lindelof, Janusz Sadowski, R Mathieu, P Svedlindh

Research output: Contribution to journalArticlepeer-review

36 Citations (SciVal)

Abstract

We report a clear correspondence between changes in the Curie temperature and carrier density upon annealing in epitaxially grown (Ga,Mn)As layers with thicknesses in the range between 5 and 20 nm. The changes are dependent on the layer thickness, indicating that the (Ga,Mn)As-GaAs interface has importance for the physical properties of the (Ga,Mn)As layer. The magnetoresistance shows additional features when compared to thick (Ga,Mn)As layers, that are at present of unknown origin. (C) 2003 American Institute of Physics.
Original languageEnglish
Pages (from-to)2287-2289
JournalApplied Physics Letters
Volume82
Issue number14
DOIs
Publication statusPublished - 2003

Subject classification (UKÄ)

  • Physical Sciences
  • Natural Sciences

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