Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films

BS Sorensen; PE Lindelof; Janusz Sadowski; R Mathieu; P Svedlindh

doi:10.1063/1.1566097

Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films

BS Sorensen, PE Lindelof, Janusz Sadowski, R Mathieu, P Svedlindh

MAX IV Laboratory

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Abstract

We report a clear correspondence between changes in the Curie temperature and carrier density upon annealing in epitaxially grown (Ga,Mn)As layers with thicknesses in the range between 5 and 20 nm. The changes are dependent on the layer thickness, indicating that the (Ga,Mn)As-GaAs interface has importance for the physical properties of the (Ga,Mn)As layer. The magnetoresistance shows additional features when compared to thick (Ga,Mn)As layers, that are at present of unknown origin. (C) 2003 American Institute of Physics.

Original language	English
Pages (from-to)	2287-2289
Journal	Applied Physics Letters
Volume	82
Issue number	14
DOIs	https://doi.org/10.1063/1.1566097
Publication status	Published - 2003

Subject classification (UKÄ)

Physical Sciences
Natural Sciences

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10.1063/1.1566097

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title = "Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films",

abstract = "We report a clear correspondence between changes in the Curie temperature and carrier density upon annealing in epitaxially grown (Ga,Mn)As layers with thicknesses in the range between 5 and 20 nm. The changes are dependent on the layer thickness, indicating that the (Ga,Mn)As-GaAs interface has importance for the physical properties of the (Ga,Mn)As layer. The magnetoresistance shows additional features when compared to thick (Ga,Mn)As layers, that are at present of unknown origin. (C) 2003 American Institute of Physics.",

author = "BS Sorensen and PE Lindelof and Janusz Sadowski and R Mathieu and P Svedlindh",

year = "2003",

doi = "10.1063/1.1566097",

language = "English",

volume = "82",

pages = "2287--2289",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics (AIP)",

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T1 - Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films

AU - Sorensen, BS

AU - Lindelof, PE

AU - Sadowski, Janusz

AU - Mathieu, R

AU - Svedlindh, P

PY - 2003

Y1 - 2003

N2 - We report a clear correspondence between changes in the Curie temperature and carrier density upon annealing in epitaxially grown (Ga,Mn)As layers with thicknesses in the range between 5 and 20 nm. The changes are dependent on the layer thickness, indicating that the (Ga,Mn)As-GaAs interface has importance for the physical properties of the (Ga,Mn)As layer. The magnetoresistance shows additional features when compared to thick (Ga,Mn)As layers, that are at present of unknown origin. (C) 2003 American Institute of Physics.

AB - We report a clear correspondence between changes in the Curie temperature and carrier density upon annealing in epitaxially grown (Ga,Mn)As layers with thicknesses in the range between 5 and 20 nm. The changes are dependent on the layer thickness, indicating that the (Ga,Mn)As-GaAs interface has importance for the physical properties of the (Ga,Mn)As layer. The magnetoresistance shows additional features when compared to thick (Ga,Mn)As layers, that are at present of unknown origin. (C) 2003 American Institute of Physics.

U2 - 10.1063/1.1566097

DO - 10.1063/1.1566097

M3 - Article

SN - 0003-6951

VL - 82

SP - 2287

EP - 2289

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films

Abstract

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