Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1-xZrxO2

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Ferroelectric memories based on hafnium oxide are an attractive alternative to conventional memory technologies due to their scalability and energy efficiency. However, there are still many open questions regarding the optimal material stack and processing conditions for reliable device performance. Here, we report on the impact of the sputtering process conditions of the commonly used TiN top electrode on the ferroelectric properties of Hf1-xZrxO2. By manipulating the deposition pressure and chemistry, we control the preferential orientation of the TiN grains between (111) and (002). We observe that (111) textured TiN is superior to (002) texturing for achieving high remanent polarization (Pr). Furthermore, we find that additional nitrogen supply during TiN deposition leads to >5× greater endurance, possibly by limiting the scavenging of oxygen from the Hf1-xZrxO2 film. These results help explain the large Pr variation reported in the literature for Hf1-xZrxO2/TiN and highlights the necessity of tuning the top electrode of the ferroelectric stack for successful device implementation.

Original languageEnglish
Pages (from-to)11089-11095
Number of pages7
JournalACS applied materials & interfaces
Issue number9
Publication statusPublished - 2021

Subject classification (UKÄ)

  • Nano Technology
  • Condensed Matter Physics

Free keywords

  • CMOS integration
  • ferroelectric FET
  • ferroelectric tunnel junction
  • hafnium oxide
  • III−V
  • thin films


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