Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy

Claes Thelander; Philippe Caroff; Sebastien Plissard; Kimberly Dick Thelander

doi:10.1063/1.4726037

Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy

Claes Thelander, Philippe Caroff, Sebastien Plissard, Kimberly Dick Thelander

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Abstract

Results of electrical characterization of Au nucleated InAs1-xSbx nanowires grown by molecular beam epitaxy are reported. An almost doubling of the extracted field effect mobility compared to reference InAs nanowires is observed for a Sb content of x = 0.13. Pure InSb nanowires on the other hand show considerably lower, and strongly diameter dependent, mobility values. Finally, InAs of wurtzite crystal phase overgrown with an InAs1-xSbx shell is found to have a substantial positive shift in threshold voltage compared to reference nanowires. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726037]

Original language	English
Journal	Applied Physics Letters
Volume	100
Issue number	23
DOIs	https://doi.org/10.1063/1.4726037
Publication status	Published - 2012

Subject classification (UKÄ)

Condensed Matter Physics (including Material Physics, Nano Physics)

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10.1063/1.4726037

Thelander2012

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title = "Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy",

abstract = "Results of electrical characterization of Au nucleated InAs1-xSbx nanowires grown by molecular beam epitaxy are reported. An almost doubling of the extracted field effect mobility compared to reference InAs nanowires is observed for a Sb content of x = 0.13. Pure InSb nanowires on the other hand show considerably lower, and strongly diameter dependent, mobility values. Finally, InAs of wurtzite crystal phase overgrown with an InAs1-xSbx shell is found to have a substantial positive shift in threshold voltage compared to reference nanowires. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726037]",

author = "Claes Thelander and Philippe Caroff and Sebastien Plissard and \{Dick Thelander\}, Kimberly",

year = "2012",

doi = "10.1063/1.4726037",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

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T1 - Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy

AU - Thelander, Claes

AU - Caroff, Philippe

AU - Plissard, Sebastien

AU - Dick Thelander, Kimberly

PY - 2012

Y1 - 2012

N2 - Results of electrical characterization of Au nucleated InAs1-xSbx nanowires grown by molecular beam epitaxy are reported. An almost doubling of the extracted field effect mobility compared to reference InAs nanowires is observed for a Sb content of x = 0.13. Pure InSb nanowires on the other hand show considerably lower, and strongly diameter dependent, mobility values. Finally, InAs of wurtzite crystal phase overgrown with an InAs1-xSbx shell is found to have a substantial positive shift in threshold voltage compared to reference nanowires. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726037]

AB - Results of electrical characterization of Au nucleated InAs1-xSbx nanowires grown by molecular beam epitaxy are reported. An almost doubling of the extracted field effect mobility compared to reference InAs nanowires is observed for a Sb content of x = 0.13. Pure InSb nanowires on the other hand show considerably lower, and strongly diameter dependent, mobility values. Finally, InAs of wurtzite crystal phase overgrown with an InAs1-xSbx shell is found to have a substantial positive shift in threshold voltage compared to reference nanowires. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726037]

UR - https://www.scopus.com/pages/publications/84862137591

U2 - 10.1063/1.4726037

DO - 10.1063/1.4726037

M3 - Article

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy

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