Electronic structure of nanometer-scale semiconductor wires

Martin Persson; Hongqi Xu

doi:10.1109/NANO.2003.1231727

Electronic structure of nanometer-scale semiconductor wires

Martin Persson, Hongqi Xu

Solid State Physics

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

Abstract

We report a theoretical study of the electronic structure and optical properties of GaAs nanowires grown in the [111] direction with a hexagonal cross section, based on a tight-binding approach. It is shown that in the nanowires the degeneracy of the light-hole and heavy-hole bands at the Γ-point seen in the bulk material is lifted, and the light-hole state is located above the heavy-hole state, in strong contrast to the prediction by effective mass theory. The imaginary part of the dielectric function of the nanowires is also calculated and the absorption spectra is found to be strongly polarized

Original language	English
Title of host publication	2003 Third IEEE Conference on Nanotechnology. IEEE-NANO 2003. Proceedings (Cat. No.03TH8700)
Publisher	IEEE - Institute of Electrical and Electronics Engineers Inc.
Pages	111-114
ISBN (Print)	0-7803-7976-4
DOIs	https://doi.org/10.1109/NANO.2003.1231727
Publication status	Published - 2003
Event	IEEE Conference on Nanotechnology - San Francisco, CA, United States Duration: 2003 Aug 12 → 2003 Aug 14

Conference

Conference	IEEE Conference on Nanotechnology
Country/Territory	United States
City	San Francisco, CA
Period	2003/08/12 → 2003/08/14

Subject classification (UKÄ)

Condensed Matter Physics (including Material Physics, Nano Physics)

Free keywords

effective mass theory
hole state
bulk material
hole bands
tight binding technique
hexagonal cross section
GaAs nanowires [111] direction
optical properties
electronic structure
nanometer scale semiconductor wires
GaAs
absorption spectra
nanowires
polarization
dielectric function

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10.1109/NANO.2003.1231727

Cite this

@inproceedings{32416d7682864153aa4a7699dd3c554f,

title = "Electronic structure of nanometer-scale semiconductor wires",

abstract = "We report a theoretical study of the electronic structure and optical properties of GaAs nanowires grown in the [111] direction with a hexagonal cross section, based on a tight-binding approach. It is shown that in the nanowires the degeneracy of the light-hole and heavy-hole bands at the Γ-point seen in the bulk material is lifted, and the light-hole state is located above the heavy-hole state, in strong contrast to the prediction by effective mass theory. The imaginary part of the dielectric function of the nanowires is also calculated and the absorption spectra is found to be strongly polarized",

keywords = "effective mass theory, hole state, bulk material, hole bands, tight binding technique, hexagonal cross section, GaAs nanowires [111] direction, optical properties, electronic structure, nanometer scale semiconductor wires, GaAs, absorption spectra, nanowires, polarization, dielectric function",

author = "Martin Persson and Hongqi Xu",

year = "2003",

doi = "10.1109/NANO.2003.1231727",

language = "English",

isbn = "0-7803-7976-4",

pages = "111--114",

booktitle = "2003 Third IEEE Conference on Nanotechnology. IEEE-NANO 2003. Proceedings (Cat. No.03TH8700)",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "IEEE Conference on Nanotechnology ; Conference date: 12-08-2003 Through 14-08-2003",

}

Persson, M & Xu, H 2003, Electronic structure of nanometer-scale semiconductor wires. in 2003 Third IEEE Conference on Nanotechnology. IEEE-NANO 2003. Proceedings (Cat. No.03TH8700). IEEE - Institute of Electrical and Electronics Engineers Inc., pp. 111-114, IEEE Conference on Nanotechnology, San Francisco, CA, United States, 2003/08/12. https://doi.org/10.1109/NANO.2003.1231727

Electronic structure of nanometer-scale semiconductor wires. / Persson, Martin; Xu, Hongqi.
2003 Third IEEE Conference on Nanotechnology. IEEE-NANO 2003. Proceedings (Cat. No.03TH8700). IEEE - Institute of Electrical and Electronics Engineers Inc., 2003. p. 111-114.

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

TY - GEN

T1 - Electronic structure of nanometer-scale semiconductor wires

AU - Persson, Martin

AU - Xu, Hongqi

PY - 2003

Y1 - 2003

N2 - We report a theoretical study of the electronic structure and optical properties of GaAs nanowires grown in the [111] direction with a hexagonal cross section, based on a tight-binding approach. It is shown that in the nanowires the degeneracy of the light-hole and heavy-hole bands at the Γ-point seen in the bulk material is lifted, and the light-hole state is located above the heavy-hole state, in strong contrast to the prediction by effective mass theory. The imaginary part of the dielectric function of the nanowires is also calculated and the absorption spectra is found to be strongly polarized

AB - We report a theoretical study of the electronic structure and optical properties of GaAs nanowires grown in the [111] direction with a hexagonal cross section, based on a tight-binding approach. It is shown that in the nanowires the degeneracy of the light-hole and heavy-hole bands at the Γ-point seen in the bulk material is lifted, and the light-hole state is located above the heavy-hole state, in strong contrast to the prediction by effective mass theory. The imaginary part of the dielectric function of the nanowires is also calculated and the absorption spectra is found to be strongly polarized

KW - effective mass theory

KW - hole state

KW - bulk material

KW - hole bands

KW - tight binding technique

KW - hexagonal cross section

KW - GaAs nanowires [111] direction

KW - optical properties

KW - electronic structure

KW - nanometer scale semiconductor wires

KW - GaAs

KW - absorption spectra

KW - nanowires

KW - polarization

KW - dielectric function

U2 - 10.1109/NANO.2003.1231727

DO - 10.1109/NANO.2003.1231727

M3 - Paper in conference proceeding

SN - 0-7803-7976-4

SP - 111

EP - 114

BT - 2003 Third IEEE Conference on Nanotechnology. IEEE-NANO 2003. Proceedings (Cat. No.03TH8700)

PB - IEEE - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE Conference on Nanotechnology

Y2 - 12 August 2003 through 14 August 2003

ER -

Electronic structure of nanometer-scale semiconductor wires

Abstract

Conference

Subject classification (UKÄ)

Free keywords

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Cite this