Electronic structure of nanometer-sized semiconductor crystals

Martin Persson; Hongqi Xu

Electronic structure of nanometer-sized semiconductor crystals

Martin Persson, Hongqi Xu

Solid State Physics

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

Abstract

We report on a theoretical study of the electronic structure of semiconductor nanocrystals, based on a tight-binding method. Both one- and zero-dimensional structures have been studied. Concerning the one-dimensional structures, the effect of the confinement on the band structure of nanowires has been studied. We find that a transition from direct to indirect band gap occurs in the band structure as the size of the wire becomes smaller than a critical size. The effect is particularly prominent in the GaAs material. In the case of the zero-dimensional nanocrystals we have studied the effect of the confinement on the electronic structure of silicon. We show that the six-fold degenerate conduction band minima of the Si bulk crystal split into an A1 state, an E state and a T2 state. The ordering of these states is found to change with the size of the nanocrystal. The wave functions of the lowest unoccupied states and the highest occupied states of each symmetry have also been analyzed

Original language	English
Title of host publication	7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
Publisher	Lund University
Number of pages	2
Publication status	Published - 2002
Event	Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) - Malmö, Sweden Duration: 2002 Jun 24 → 2002 Jun 28

Conference

Conference	Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
Country/Territory	Sweden
City	Malmö
Period	2002/06/24 → 2002/06/28

Subject classification (UKÄ)

Condensed Matter Physics

Free keywords

nanometer sized semiconductor crystals
electronic structure
tight binding method
zero dimensional structures
one dimensional structures
band structure
nanowires
indirect band gap
GaAs material
zero dimensional nanocrystals
silicon
Si
GaAs
T2 state
A1 state
E state
Si bulk crystal
six fold degenerate conduction band

Cite this

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title = "Electronic structure of nanometer-sized semiconductor crystals",

abstract = "We report on a theoretical study of the electronic structure of semiconductor nanocrystals, based on a tight-binding method. Both one- and zero-dimensional structures have been studied. Concerning the one-dimensional structures, the effect of the confinement on the band structure of nanowires has been studied. We find that a transition from direct to indirect band gap occurs in the band structure as the size of the wire becomes smaller than a critical size. The effect is particularly prominent in the GaAs material. In the case of the zero-dimensional nanocrystals we have studied the effect of the confinement on the electronic structure of silicon. We show that the six-fold degenerate conduction band minima of the Si bulk crystal split into an A1 state, an E state and a T2 state. The ordering of these states is found to change with the size of the nanocrystal. The wave functions of the lowest unoccupied states and the highest occupied states of each symmetry have also been analyzed",

keywords = "nanometer sized semiconductor crystals, electronic structure, tight binding method, zero dimensional structures, one dimensional structures, band structure, nanowires, indirect band gap, GaAs material, zero dimensional nanocrystals, silicon, Si, GaAs, T2 state, A1 state, E state, Si bulk crystal, six fold degenerate conduction band",

author = "Martin Persson and Hongqi Xu",

year = "2002",

language = "English",

booktitle = "7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science",

publisher = "Lund University",

note = "Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) ; Conference date: 24-06-2002 Through 28-06-2002",

}

Persson, M & Xu, H 2002, Electronic structure of nanometer-sized semiconductor crystals. in 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science. Lund University, Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21), Malmö, Sweden, 2002/06/24.

TY - GEN

T1 - Electronic structure of nanometer-sized semiconductor crystals

AU - Persson, Martin

AU - Xu, Hongqi

PY - 2002

Y1 - 2002

N2 - We report on a theoretical study of the electronic structure of semiconductor nanocrystals, based on a tight-binding method. Both one- and zero-dimensional structures have been studied. Concerning the one-dimensional structures, the effect of the confinement on the band structure of nanowires has been studied. We find that a transition from direct to indirect band gap occurs in the band structure as the size of the wire becomes smaller than a critical size. The effect is particularly prominent in the GaAs material. In the case of the zero-dimensional nanocrystals we have studied the effect of the confinement on the electronic structure of silicon. We show that the six-fold degenerate conduction band minima of the Si bulk crystal split into an A1 state, an E state and a T2 state. The ordering of these states is found to change with the size of the nanocrystal. The wave functions of the lowest unoccupied states and the highest occupied states of each symmetry have also been analyzed

AB - We report on a theoretical study of the electronic structure of semiconductor nanocrystals, based on a tight-binding method. Both one- and zero-dimensional structures have been studied. Concerning the one-dimensional structures, the effect of the confinement on the band structure of nanowires has been studied. We find that a transition from direct to indirect band gap occurs in the band structure as the size of the wire becomes smaller than a critical size. The effect is particularly prominent in the GaAs material. In the case of the zero-dimensional nanocrystals we have studied the effect of the confinement on the electronic structure of silicon. We show that the six-fold degenerate conduction band minima of the Si bulk crystal split into an A1 state, an E state and a T2 state. The ordering of these states is found to change with the size of the nanocrystal. The wave functions of the lowest unoccupied states and the highest occupied states of each symmetry have also been analyzed

KW - nanometer sized semiconductor crystals

KW - electronic structure

KW - tight binding method

KW - zero dimensional structures

KW - one dimensional structures

KW - band structure

KW - nanowires

KW - indirect band gap

KW - GaAs material

KW - zero dimensional nanocrystals

KW - silicon

KW - Si

KW - GaAs

KW - T2 state

KW - A1 state

KW - E state

KW - Si bulk crystal

KW - six fold degenerate conduction band

M3 - Paper in conference proceeding

BT - 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science

PB - Lund University

T2 - Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)

Y2 - 24 June 2002 through 28 June 2002

ER -

Electronic structure of nanometer-sized semiconductor crystals

Abstract

Conference

Subject classification (UKÄ)

Free keywords

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Cite this