EXAFS measurements of metal-decorated nanocavities in Si

GD Azevedo, MC Ridgway, J Betlehem, KM Yu, Chris Glover, GJ Foran

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceedingpeer-review

Abstract

This contribution presents a sample preparation methodology to enable the identification, with synchrotron radiation-based analytical techniques, of the gettering sites of metallic impurities on the internal walls of implantation-induced nanocavities in Si substrates. Preliminary results for the Cu-Si and Cu-Cu bond lengths on the internal surface of the nanocavities are reported. (C) 2002 Elsevier Science B.V. All rights reserved.
Original languageEnglish
Title of host publicationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
PublisherElsevier
Pages179-184
Volume199
DOIs
Publication statusPublished - 2003
Event3rd International Conference on Synchrotron Radiation in Materials Science - Singapore, Singapore
Duration: 2002 Jan 212002 Jan 24

Publication series

Name
Volume199
ISSN (Print)0168-583X

Conference

Conference3rd International Conference on Synchrotron Radiation in Materials Science
Country/TerritorySingapore
CitySingapore
Period2002/01/212002/01/24

Subject classification (UKÄ)

  • Physical Sciences
  • Natural Sciences

Free keywords

  • voids
  • gettering
  • silicon
  • EXAFS
  • cavities

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