Excitonic Dynamics at the Type-II Polytype Interface of InP Platelets

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Abstract

Indirect excitons are the focus of intense research due to the opportunity of studying degenerate quantum gases and liquids in an excitonic system. To realize such systems, it is highly advantageous to have as little scattering as possible. A polytype type-II interface is formed between wurtzite and zincblende InP due to the band alignment. Electrons gather on the zincblende and holes on the wurtzite side of the interface. Therefore, electrons and holes that are spatially separated by the interface form indirect excitons with aligned dipoles. This polytype type-II interface is perfectly flat, which limits scattering. Here we report that repulsive interaction between the indirect excitons is the driving force behind the long-range transport of indirect excitons along the interface at high exciton densities. This is indicative of less scattering than in conventional type-II heterostructures. The spatial separation of the charge carriers across the interface leads to a low recombination rate of the indirect excitons since the overlap of the electron-hole wavefunction at the interface is small. Emission from the long-lived indirect excitons can be detected even after 40 μs. Our studies have been performed by using spatially and temporally resolved photoluminescence at the low temperature.
Original languageEnglish
Pages (from-to)3143-3148
Number of pages6
JournalACS Photonics
Volume10
Issue number9
DOIs
Publication statusPublished - 2023 Sept 20

Subject classification (UKÄ)

  • Atom and Molecular Physics and Optics
  • Condensed Matter Physics

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