Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates

Karl-Magnus Persson; Martin Berg; Mattias Borg; Jun Wu; Sofia Johansson; Johannes Svensson; Kristofer Jansson; Erik Lind; Lars-Erik Wernersson

doi:10.1109/TED.2013.2272324

Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates

Karl-Magnus Persson, Martin Berg, Mattias Borg, Jun Wu, Sofia Johansson, Johannes Svensson, Kristofer Jansson, Erik Lind, Lars-Erik Wernersson

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Abstract

This paper presents DC and RF characterization as
well as modeling of vertical InAs nanowire MOSFETs with LG =
200 nm and Al2O3/HfO2 high-κ dielectric. Measurements at VDS =
0.5 V show that high transconductance (gm = 1.37 mS/μm), high
drive current (IDS = 1.34 mA/μm), and low on-resistance (RON =
287 Ωμm) can be realized using vertical InAs nanowires on Si
substrates. By measuring the 1/f-noise, the gate area normalized
gate voltage noise spectral density, SVG·LG·WG, is determined to
be lowered one order of magnitude compared to similar devices
with a high-κ film consisting of HfO2 only. Additionally, with a
virtual source model we are able to determine the intrinsic
transport properties. These devices (LG = 200 nm) show a high
injection velocity (vinj = 1.7·107 cm/s) with a performance
degradation for array FETs predominantly due to an increase in
series resistance.

Original language	English
Pages (from-to)	2761-2767
Journal	IEEE Transactions on Electron Devices
Volume	60
Issue number	9
DOIs	https://doi.org/10.1109/TED.2013.2272324
Publication status	Published - 2013

Subject classification (UKÄ)

Electrical Engineering, Electronic Engineering, Information Engineering
Condensed Matter Physics

Free keywords

MOSFET
RF
InAs
Nanowire (NW)

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10.1109/TED.2013.2272324

TED13_-_KMP_et_al

http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6563112

Cite this

@article{052bca2ea2c0466fb405b4f149fd0037,

title = "Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates",

abstract = "This paper presents DC and RF characterization as well as modeling of vertical InAs nanowire MOSFETs with LG = 200 nm and Al2O3/HfO2 high-κ dielectric. Measurements at VDS = 0.5 V show that high transconductance (gm = 1.37 mS/μm), high drive current (IDS = 1.34 mA/μm), and low on-resistance (RON = 287 Ωμm) can be realized using vertical InAs nanowires on Si substrates. By measuring the 1/f-noise, the gate area normalized gate voltage noise spectral density, SVG·LG·WG, is determined to be lowered one order of magnitude compared to similar devices with a high-κ film consisting of HfO2 only. Additionally, with a virtual source model we are able to determine the intrinsic transport properties. These devices (LG = 200 nm) show a high injection velocity (vinj = 1.7·107 cm/s) with a performance degradation for array FETs predominantly due to an increase in series resistance.",

keywords = "MOSFET, RF, InAs, Nanowire (NW)",

author = "Karl-Magnus Persson and Martin Berg and Mattias Borg and Jun Wu and Sofia Johansson and Johannes Svensson and Kristofer Jansson and Erik Lind and Lars-Erik Wernersson",

year = "2013",

doi = "10.1109/TED.2013.2272324",

language = "English",

volume = "60",

pages = "2761--2767",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates

AU - Persson, Karl-Magnus

AU - Berg, Martin

AU - Borg, Mattias

AU - Wu, Jun

AU - Johansson, Sofia

AU - Svensson, Johannes

AU - Jansson, Kristofer

AU - Lind, Erik

AU - Wernersson, Lars-Erik

PY - 2013

Y1 - 2013

N2 - This paper presents DC and RF characterization as well as modeling of vertical InAs nanowire MOSFETs with LG = 200 nm and Al2O3/HfO2 high-κ dielectric. Measurements at VDS = 0.5 V show that high transconductance (gm = 1.37 mS/μm), high drive current (IDS = 1.34 mA/μm), and low on-resistance (RON = 287 Ωμm) can be realized using vertical InAs nanowires on Si substrates. By measuring the 1/f-noise, the gate area normalized gate voltage noise spectral density, SVG·LG·WG, is determined to be lowered one order of magnitude compared to similar devices with a high-κ film consisting of HfO2 only. Additionally, with a virtual source model we are able to determine the intrinsic transport properties. These devices (LG = 200 nm) show a high injection velocity (vinj = 1.7·107 cm/s) with a performance degradation for array FETs predominantly due to an increase in series resistance.

AB - This paper presents DC and RF characterization as well as modeling of vertical InAs nanowire MOSFETs with LG = 200 nm and Al2O3/HfO2 high-κ dielectric. Measurements at VDS = 0.5 V show that high transconductance (gm = 1.37 mS/μm), high drive current (IDS = 1.34 mA/μm), and low on-resistance (RON = 287 Ωμm) can be realized using vertical InAs nanowires on Si substrates. By measuring the 1/f-noise, the gate area normalized gate voltage noise spectral density, SVG·LG·WG, is determined to be lowered one order of magnitude compared to similar devices with a high-κ film consisting of HfO2 only. Additionally, with a virtual source model we are able to determine the intrinsic transport properties. These devices (LG = 200 nm) show a high injection velocity (vinj = 1.7·107 cm/s) with a performance degradation for array FETs predominantly due to an increase in series resistance.

KW - MOSFET

KW - RF

KW - InAs

KW - Nanowire (NW)

U2 - 10.1109/TED.2013.2272324

DO - 10.1109/TED.2013.2272324

M3 - Article

SN - 0018-9383

VL - 60

SP - 2761

EP - 2767

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 9

ER -

Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates

Abstract

Subject classification (UKÄ)

Free keywords

Access to Document

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Cite this