Fabrication of Single-Crystalline InSb-on-Insulator by Rapid Melt Growth

Heera Menon, Nicholas Paul Morgan, Crispin Hetherington, Robin Athle, Matthew Steer, Iain Thayne, Anna Fontcuberta i Morral, Mattias Borg

Research output: Contribution to journalArticlepeer-review

Abstract

InSb has the smallest bandgap and highest electron mobility among III-V semiconductors and is widely used for photodetectors and high-frequency electronic applications. Integration of InSb directly on Si would drastically reduce the fabrication cost and enable new applications, however, it is very challenging due to its 19% lattice mismatch with Si. Herein, the integration of single-crystalline InSb microstructures on insulator-covered Si through rapid melt growth (RMG) is reported and specifically provides details on the fabrication process. The importance of achieving high-quality conformal capping layers at low thermal budget to contain the InSb melt is assessed when the sample is annealed. The importance of ensuring a pristine Si seed area to achieve single-crystalline InSb is illustrated and demonstrated here for the first time.

Original languageEnglish
Article number2100467
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume2021
DOIs
Publication statusAccepted/In press - 2021

Subject classification (UKÄ)

  • Condensed Matter Physics

Keywords

  • electron backscatter diffraction (EBSD)
  • InSb
  • rapid melt growth (RMG)
  • Si
  • single crystal
  • TEM
  • XRR

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