First InGaAs lateral nanowire MOSFET RF noise measurements and model

Lars Ohlsson; Fredrik Lindelow; Cezar B. Zota; Matthias Ohlrogge; Thomas Merkle; Lars Erik Wernersson; Erik Lind

doi:10.1109/DRC.2017.7999451

First InGaAs lateral nanowire MOSFET RF noise measurements and model

Lars Ohlsson, Fredrik Lindelow, Cezar B. Zota, Matthias Ohlrogge, Thomas Merkle, Lars Erik Wernersson, Erik Lind

Nano Electronics

Fraunhofer Institute for Applied Solid State Physics

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

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Abstract

The first radio frequency (RF) noise measurements on lateral nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs) and a noise model are presented. We have characterized the RF noise and scattering parameters of an indium gallium arsenide (InGaAs) device. A fitted model yields extrapolated f_t = 316 GHz current gain cutoff and f_max = 166 GHz maximum oscillation frequency. This device technology is being developed for millimeter wave circuit implementations, targeting a 94 GHz carrier frequency. The modeled intrinsic F_min < 1dB minimum noise figure obtained promises performance at the target band, given reduction of gate parasitics. In any wireless system, noise and bandwidth limits the performance. Understanding of RF noise in nanowire MOSFET devices is thereby key for realization of future radar and communications systems.

Original language	English
Title of host publication	75th Annual Device Research Conference, DRC 2017
Publisher	IEEE - Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509063277
DOIs	https://doi.org/10.1109/DRC.2017.7999451
Publication status	Published - 2017 Aug 1
Event	75th Annual Device Research Conference, DRC 2017 - South Bend, United States Duration: 2017 Jun 25 → 2017 Jun 28

Conference

Conference	75th Annual Device Research Conference, DRC 2017
Country/Territory	United States
City	South Bend
Period	2017/06/25 → 2017/06/28

Subject classification (UKÄ)

Electrical Engineering, Electronic Engineering, Information Engineering

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10.1109/DRC.2017.7999451

Pre-print manuscriptSubmitted manuscript, 286 KB

Cite this

@inproceedings{8ac874f12b784134a85bba563323a3af,

title = "First InGaAs lateral nanowire MOSFET RF noise measurements and model",

abstract = "The first radio frequency (RF) noise measurements on lateral nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs) and a noise model are presented. We have characterized the RF noise and scattering parameters of an indium gallium arsenide (InGaAs) device. A fitted model yields extrapolated ft = 316 GHz current gain cutoff and fmax = 166 GHz maximum oscillation frequency. This device technology is being developed for millimeter wave circuit implementations, targeting a 94 GHz carrier frequency. The modeled intrinsic Fmin < 1dB minimum noise figure obtained promises performance at the target band, given reduction of gate parasitics. In any wireless system, noise and bandwidth limits the performance. Understanding of RF noise in nanowire MOSFET devices is thereby key for realization of future radar and communications systems.",

author = "Lars Ohlsson and Fredrik Lindelow and Zota, {Cezar B.} and Matthias Ohlrogge and Thomas Merkle and Wernersson, {Lars Erik} and Erik Lind",

year = "2017",

month = aug,

day = "1",

doi = "10.1109/DRC.2017.7999451",

language = "English",

booktitle = "75th Annual Device Research Conference, DRC 2017",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "75th Annual Device Research Conference, DRC 2017 ; Conference date: 25-06-2017 Through 28-06-2017",

}

Ohlsson, L, Lindelow, F, Zota, CB, Ohlrogge, M, Merkle, T, Wernersson, LE & Lind, E 2017, First InGaAs lateral nanowire MOSFET RF noise measurements and model. in 75th Annual Device Research Conference, DRC 2017., 7999451, IEEE - Institute of Electrical and Electronics Engineers Inc., 75th Annual Device Research Conference, DRC 2017, South Bend, United States, 2017/06/25. https://doi.org/10.1109/DRC.2017.7999451

TY - GEN

T1 - First InGaAs lateral nanowire MOSFET RF noise measurements and model

AU - Ohlsson, Lars

AU - Lindelow, Fredrik

AU - Zota, Cezar B.

AU - Ohlrogge, Matthias

AU - Merkle, Thomas

AU - Wernersson, Lars Erik

AU - Lind, Erik

PY - 2017/8/1

Y1 - 2017/8/1

N2 - The first radio frequency (RF) noise measurements on lateral nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs) and a noise model are presented. We have characterized the RF noise and scattering parameters of an indium gallium arsenide (InGaAs) device. A fitted model yields extrapolated ft = 316 GHz current gain cutoff and fmax = 166 GHz maximum oscillation frequency. This device technology is being developed for millimeter wave circuit implementations, targeting a 94 GHz carrier frequency. The modeled intrinsic Fmin < 1dB minimum noise figure obtained promises performance at the target band, given reduction of gate parasitics. In any wireless system, noise and bandwidth limits the performance. Understanding of RF noise in nanowire MOSFET devices is thereby key for realization of future radar and communications systems.

AB - The first radio frequency (RF) noise measurements on lateral nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs) and a noise model are presented. We have characterized the RF noise and scattering parameters of an indium gallium arsenide (InGaAs) device. A fitted model yields extrapolated ft = 316 GHz current gain cutoff and fmax = 166 GHz maximum oscillation frequency. This device technology is being developed for millimeter wave circuit implementations, targeting a 94 GHz carrier frequency. The modeled intrinsic Fmin < 1dB minimum noise figure obtained promises performance at the target band, given reduction of gate parasitics. In any wireless system, noise and bandwidth limits the performance. Understanding of RF noise in nanowire MOSFET devices is thereby key for realization of future radar and communications systems.

U2 - 10.1109/DRC.2017.7999451

DO - 10.1109/DRC.2017.7999451

M3 - Paper in conference proceeding

AN - SCOPUS:85028042508

BT - 75th Annual Device Research Conference, DRC 2017

PB - IEEE - Institute of Electrical and Electronics Engineers Inc.

T2 - 75th Annual Device Research Conference, DRC 2017

Y2 - 25 June 2017 through 28 June 2017

ER -

First InGaAs lateral nanowire MOSFET RF noise measurements and model

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Conference

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