Formation of epitaxial MnBi layers on (Ga,Mn)As

Johan Adell, Martin Adell, Intikab Ulfat, Lars Ilver, Janusz Sadowski, Janusz Kanski

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1 Citation (SciVal)

Abstract

The initial growth of MnBi on MnAs-terminated (GaMn)As is studied by means of synchrotron-based photoelectron spectroscopy. From analysis of surface core-level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well-defined 1×2 surface reconstruction of the MnAs surface is preserved for up to 2 ML of MnBi before clear surface degradation occurs. The MnBi layer appears to be free from intermixed As.
Original languageEnglish
Article number075204
JournalPhysical Review B (Condensed Matter and Materials Physics)
Volume80
Issue number7
DOIs
Publication statusPublished - 2009

Subject classification (UKÄ)

  • Physical Sciences
  • Natural Sciences

Keywords

  • semimagnetic semiconductors
  • ferromagnetic materials
  • surface reconstruction
  • photoelectron spectra
  • metallic epitaxial layers
  • manganese compounds
  • manganese alloys
  • magnetic epitaxial layers
  • magnetisation
  • bismuth alloys
  • gallium arsenide
  • core levels

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