Formation of epitaxial MnBi layers on (Ga,Mn)As

Johan Adell; Martin Adell; Intikab Ulfat; Lars Ilver; Janusz Sadowski; Janusz Kanski

doi:10.1103/PhysRevB.80.075204

Formation of epitaxial MnBi layers on (Ga,Mn)As

Johan Adell, Martin Adell, Intikab Ulfat, Lars Ilver, Janusz Sadowski, Janusz Kanski

MAX IV Laboratory

Chalmers University of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

The initial growth of MnBi on MnAs-terminated (GaMn)As is studied by means of synchrotron-based photoelectron spectroscopy. From analysis of surface core-level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well-defined 1×2 surface reconstruction of the MnAs surface is preserved for up to 2 ML of MnBi before clear surface degradation occurs. The MnBi layer appears to be free from intermixed As.

Original language	English
Article number	075204
Journal	Physical Review B (Condensed Matter and Materials Physics)
Volume	80
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.80.075204
Publication status	Published - 2009

Subject classification (UKÄ)

Physical Sciences
Natural Sciences

Free keywords

semimagnetic semiconductors
ferromagnetic materials
surface reconstruction
photoelectron spectra
metallic epitaxial layers
manganese compounds
manganese alloys
magnetic epitaxial layers
magnetisation
bismuth alloys
gallium arsenide
core levels

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10.1103/PhysRevB.80.075204

http://link.aps.org/doi/10.1103/PhysRevB.80.075204

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title = "Formation of epitaxial MnBi layers on (Ga,Mn)As",

abstract = "The initial growth of MnBi on MnAs-terminated (GaMn)As is studied by means of synchrotron-based photoelectron spectroscopy. From analysis of surface core-level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well-defined 1×2 surface reconstruction of the MnAs surface is preserved for up to 2 ML of MnBi before clear surface degradation occurs. The MnBi layer appears to be free from intermixed As.",

keywords = "semimagnetic semiconductors, ferromagnetic materials, surface reconstruction, photoelectron spectra, metallic epitaxial layers, manganese compounds, manganese alloys, magnetic epitaxial layers, magnetisation, bismuth alloys, gallium arsenide, core levels",

author = "Johan Adell and Martin Adell and Intikab Ulfat and Lars Ilver and Janusz Sadowski and Janusz Kanski",

year = "2009",

doi = "10.1103/PhysRevB.80.075204",

language = "English",

volume = "80",

journal = "Physical Review B (Condensed Matter and Materials Physics)",

issn = "1098-0121",

publisher = "American Physical Society",

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TY - JOUR

T1 - Formation of epitaxial MnBi layers on (Ga,Mn)As

AU - Adell, Johan

AU - Adell, Martin

AU - Ulfat, Intikab

AU - Ilver, Lars

AU - Sadowski, Janusz

AU - Kanski, Janusz

PY - 2009

Y1 - 2009

N2 - The initial growth of MnBi on MnAs-terminated (GaMn)As is studied by means of synchrotron-based photoelectron spectroscopy. From analysis of surface core-level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well-defined 1×2 surface reconstruction of the MnAs surface is preserved for up to 2 ML of MnBi before clear surface degradation occurs. The MnBi layer appears to be free from intermixed As.

AB - The initial growth of MnBi on MnAs-terminated (GaMn)As is studied by means of synchrotron-based photoelectron spectroscopy. From analysis of surface core-level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well-defined 1×2 surface reconstruction of the MnAs surface is preserved for up to 2 ML of MnBi before clear surface degradation occurs. The MnBi layer appears to be free from intermixed As.

KW - semimagnetic semiconductors

KW - ferromagnetic materials

KW - surface reconstruction

KW - photoelectron spectra

KW - metallic epitaxial layers

KW - manganese compounds

KW - manganese alloys

KW - magnetic epitaxial layers

KW - magnetisation

KW - bismuth alloys

KW - gallium arsenide

KW - core levels

U2 - 10.1103/PhysRevB.80.075204

DO - 10.1103/PhysRevB.80.075204

M3 - Article

SN - 1098-0121

VL - 80

JO - Physical Review B (Condensed Matter and Materials Physics)

JF - Physical Review B (Condensed Matter and Materials Physics)

IS - 7

M1 - 075204

ER -

Formation of epitaxial MnBi layers on (Ga,Mn)As

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Subject classification (UKÄ)

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