Abstract
The initial growth of MnBi on MnAs-terminated (GaMn)As is studied by means of synchrotron-based photoelectron spectroscopy. From analysis of surface core-level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well-defined 1×2 surface reconstruction of the MnAs surface is preserved for up to 2 ML of MnBi before clear surface degradation occurs. The MnBi layer appears to be free from intermixed As.
| Original language | English |
|---|---|
| Article number | 075204 |
| Journal | Physical Review B (Condensed Matter and Materials Physics) |
| Volume | 80 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2009 |
Subject classification (UKÄ)
- Physical Sciences
- Natural Sciences
Free keywords
- semimagnetic semiconductors
- ferromagnetic materials
- surface reconstruction
- photoelectron spectra
- metallic epitaxial layers
- manganese compounds
- manganese alloys
- magnetic epitaxial layers
- magnetisation
- bismuth alloys
- gallium arsenide
- core levels
Fingerprint
Dive into the research topics of 'Formation of epitaxial MnBi layers on (Ga,Mn)As'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver