Formation of Sm silicides on Si(111): composition and epitaxy

C. Wigren; J. N. Andersen; R. Nyholm; U. O. Karlsson

doi:10.1016/0039-6028(93)90319-F

Formation of Sm silicides on Si(111): composition and epitaxy

C. Wigren, J. N. Andersen, R. Nyholm, U. O. Karlsson

Synchrotron Radiation Research

KTH Royal Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

The formation of Sm silicides on Si(111) by means of solid phase epitaxy has been studied with low energy electron diffraction, Auger electron spectroscopy and photoelectron spectroscopy of the Sm 4f level and Si 2p level. A limited reaction is found to occur already at room temperature whereas at higher temperatures a strongly intermixed Sm/Si layer showing some long range order is formed. The Sm atoms of this intermixed phase are found to be completely trivalent in accordance with expectations. The intermixed layer consists of two silicides with different compositions, one of them being SmSi_2-x, the other being tentatively ascribed to SmSi.

Original language	English
Pages (from-to)	254-259
Number of pages	6
Journal	Surface Science
Volume	293
Issue number	3
DOIs	https://doi.org/10.1016/0039-6028(93)90319-F
Publication status	Published - 1993 Aug 20

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title = "Formation of Sm silicides on Si(111): composition and epitaxy",

abstract = "The formation of Sm silicides on Si(111) by means of solid phase epitaxy has been studied with low energy electron diffraction, Auger electron spectroscopy and photoelectron spectroscopy of the Sm 4f level and Si 2p level. A limited reaction is found to occur already at room temperature whereas at higher temperatures a strongly intermixed Sm/Si layer showing some long range order is formed. The Sm atoms of this intermixed phase are found to be completely trivalent in accordance with expectations. The intermixed layer consists of two silicides with different compositions, one of them being SmSi2-x, the other being tentatively ascribed to SmSi.",

author = "C. Wigren and Andersen, \{J. N.\} and R. Nyholm and Karlsson, \{U. O.\}",

year = "1993",

month = aug,

day = "20",

doi = "10.1016/0039-6028(93)90319-F",

language = "English",

volume = "293",

pages = "254--259",

journal = "Surface Science",

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TY - JOUR

T1 - Formation of Sm silicides on Si(111)

T2 - composition and epitaxy

AU - Wigren, C.

AU - Andersen, J. N.

AU - Nyholm, R.

AU - Karlsson, U. O.

PY - 1993/8/20

Y1 - 1993/8/20

N2 - The formation of Sm silicides on Si(111) by means of solid phase epitaxy has been studied with low energy electron diffraction, Auger electron spectroscopy and photoelectron spectroscopy of the Sm 4f level and Si 2p level. A limited reaction is found to occur already at room temperature whereas at higher temperatures a strongly intermixed Sm/Si layer showing some long range order is formed. The Sm atoms of this intermixed phase are found to be completely trivalent in accordance with expectations. The intermixed layer consists of two silicides with different compositions, one of them being SmSi2-x, the other being tentatively ascribed to SmSi.

AB - The formation of Sm silicides on Si(111) by means of solid phase epitaxy has been studied with low energy electron diffraction, Auger electron spectroscopy and photoelectron spectroscopy of the Sm 4f level and Si 2p level. A limited reaction is found to occur already at room temperature whereas at higher temperatures a strongly intermixed Sm/Si layer showing some long range order is formed. The Sm atoms of this intermixed phase are found to be completely trivalent in accordance with expectations. The intermixed layer consists of two silicides with different compositions, one of them being SmSi2-x, the other being tentatively ascribed to SmSi.

UR - https://www.scopus.com/pages/publications/0027641999

U2 - 10.1016/0039-6028(93)90319-F

DO - 10.1016/0039-6028(93)90319-F

M3 - Article

AN - SCOPUS:0027641999

SN - 0039-6028

VL - 293

SP - 254

EP - 259

JO - Surface Science

JF - Surface Science

IS - 3

ER -

Formation of Sm silicides on Si(111): composition and epitaxy

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