GaAs-based Nanowires Studied by Low-Temperature Cathodoluminescence

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Abstract

We present cathodoluminescence data of nanowires (NWs) grown using size-selected gold particles as seeds. The NWs have a GaAs core with a diameter of 50 nm and a length of several mu m. The NWs in this study were generally covered with a shell of AlGaAs. With increasing growth temperature, the emission intensity increases significantly. From a variety of growth conditions, we conclude that the exposed sides of the NWs during growth play an important role in the emission intensity. The diffusion of carriers was studied by inserting a segment of GaInAs in GaAs NWs. By capping the NWs with an AlGaAs shell, we observe a tenfold increase in the diffusion length along the core.
Original languageEnglish
Title of host publicationJournal of Physics: Conference Series
PublisherAmerican Institute of Physics (AIP)
Pages012042
Volume326
DOIs
Publication statusPublished - 2011
Event17th International Conference on Microscopy of Semiconducting Materials - Cambridge, England
Duration: 2011 Apr 42011 Apr 7

Publication series

Name
Volume326
ISSN (Print)1742-6588
ISSN (Electronic)1742-6596

Conference

Conference17th International Conference on Microscopy of Semiconducting Materials
Period2011/04/042011/04/07

Bibliographical note

The information about affiliations in this record was updated in December 2015.
The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)

Subject classification (UKÄ)

  • Chemical Sciences
  • Condensed Matter Physics

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