TY - GEN
T1 - GaMnAs: Layers, Wires and Dots
AU - Sadowski, Janusz
PY - 2008
Y1 - 2008
N2 - Thin layers of GaMnAs ferromagnetic semiconductor grown by molecular beam epitaxy on GaAS(001) substrates were studied. To improve their magnetic properties the post-growth annealing procedures were applied, using the surface passivation layers of amorphous arsenic. This post-growth treatment effectively increases the ferromagnetic-to-paramagnetic phase transition temperature in GaMnAs, and provides surface-rich MnAs layer which can be used for formation of low-dimensional structures such as superlattices. If the surface rich it-InAs layer consists of MnAs dots, then it is possible to grow Mn-doped GaAs nanowires.
AB - Thin layers of GaMnAs ferromagnetic semiconductor grown by molecular beam epitaxy on GaAS(001) substrates were studied. To improve their magnetic properties the post-growth annealing procedures were applied, using the surface passivation layers of amorphous arsenic. This post-growth treatment effectively increases the ferromagnetic-to-paramagnetic phase transition temperature in GaMnAs, and provides surface-rich MnAs layer which can be used for formation of low-dimensional structures such as superlattices. If the surface rich it-InAs layer consists of MnAs dots, then it is possible to grow Mn-doped GaAs nanowires.
M3 - Paper in conference proceeding
VL - 114
SP - 1001
EP - 1012
BT - ACTA PHYSICA POLONICA A
PB - Polish Academy of Sciences
T2 - 37th International School on the Physics of Semiconducting Compounds
Y2 - 7 June 2008 through 13 June 2008
ER -